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Número de pieza | IGW50N65F5 | |
Descripción | IGBT | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IGW50N65F5 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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Highspeed5FASTIGBTinTRENCHSTOPTM5technology
IGW50N65F5
650VIGBThighspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
1 page IGW50N65F5
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=50.0A,
VGE=15V
LE
min.
Value
typ.
max. Unit
- 3000 -
- 50 - pF
- 11 -
- 120.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=25.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=12.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=25°C,
VCC=400V,IC=6.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=12.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
min.
Value
typ.
max. Unit
- 21 - ns
- 15 - ns
- 175 - ns
- 18 - ns
- 0.49 - mJ
- 0.16 - mJ
- 0.65 - mJ
- 19 - ns
- 4 - ns
- 195 - ns
- 10 - ns
- 0.11 - mJ
- 0.04 - mJ
- 0.15 - mJ
5 Rev.2.1,2015-05-04
5 Page IGW50N65F5
Highspeedswitchingseriesfifthgeneration
1E+4
Cies
Coes
Cres
1000
100
10
1
D=0.5
0.2
0.1 0.1
0.05
0.02
0.01
single pulse
0.01
1
0 5 10 15 20 25 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
0.001
1E-6
i: 1
2
3
ri[K/W]: 0.1621884 0.2278266 0.109985
τi[s]: 8.6E-4
0.01112208 0.09568113
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 18. IGBTtransientthermalresistance
(D=tp/T)
11 Rev.2.1,2015-05-04
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet IGW50N65F5.PDF ] |
Número de pieza | Descripción | Fabricantes |
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