|
|
PDF VS-EMG050J60N Data sheet ( Hoja de datos )
| Número de pieza | VS-EMG050J60N | |
| Descripción | Dual Mode PFC | |
| Fabricantes | Vishay | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de VS-EMG050J60N (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
www.vishay.com
VS-EMG050J60N
Vishay Semiconductors
Dual Mode PFC, 60 A
EMIPAK2
PRODUCT SUMMARY
VCES
VCE(ON) typical at IC = 50 A
IC at TC = 98 °C
Package
Circuit
600 V
1.8 V
50 A
EMIPAK2
Dual Mode PFC
FEATURES
• NPT Warp2 PFC IGBT with low VCE(ON)
• Silicon carbide PFC diode
• Antiparallel FRED Pt® fast recovery
• Integrated thermistor
• Square RBSOA
• Operating frequency 60 kHz to 150 kHz
• Low internal inductances
• Low switching loss
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
VS-EMG050J60N is an integrated solution for dual stage
PFC converter in a single package. The EMIPAK2 package
is easy to use thanks to the solderable terminals and
provides improved thermal performance thanks to the
exposed substrate. The optimized layout also helps to
minimize stray parameters, allowing for better EMI
performance.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating junction temperature
Storage temperature range
RMS isolation voltage
PFC IGBT Q1 - Q2
TJ
TStg
VISOL
TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
Continuous collector current
Power dissipation
ANTIPARALLEL DIODE D1 - D2
VCES
VGES
ICM
ILM (1)
IC
PD
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Diode continuous forward current
Single pulse forward current
Power dissipation
PFC DIODE D3 - D4
IF
TC = 25 °C
TC = 80 °C
IFSM 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
PD
TC = 25 °C
TC = 80 °C
Repetitive peak reverse voltage
Diode continuous forward current
Single pulse forward current
Power dissipation
VRRM
IF
IFSM
PD
TC = 25 °C
TC = 80 °C
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
TC = 25 °C
TC = 80 °C
Notes
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
(1) VCC = 400 V, VGE = 15 V, L = 500 μH, Rg = 22 , TJ = 150 °C
MAX.
150
- 40 to 125
3500
600
20
150
150
88
60
338
189
16
11
59
29
16
600
25
17
140
74
41
UNITS
°C
V
V
A
W
A
W
V
A
W
Revision: 18-Oct-13
1 Document Number: 93495
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
100
90 VCE = 20 V
80
70
60
50 TJ = 125 °C
40 TJ = 25 °C
30
20
10
0
345678
93495_05
VGE (V)
Fig. 5 - Typical PFC IGBT Transfer Characteristics
4.5
TJ = 25 °C
4.0
3.5
3.0
TJ = 125 °C
2.5
2.0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
93495_06
IC (mA)
Fig. 6 - Typical PFC IGBT Gate Threshold Voltage
1000
100
10
1
0.1
0.01
1
93495_07
10 100 1000
VCE (V)
Fig. 7 - IGBT Reverse Bias SOA
TJ = 150 °C, VGE = 15 V, Rg = 22
VS-EMG050J60N
Vishay Semiconductors
1
0.1
0.01
0.001
125 °C
25 °C
0.0001
100 200 300 400 500 600
93495_08
VCES (V)
Fig. 8 - Typical PFC IGBT Zero Gate Voltage Collector Current
100
90
80
70
60
50
40
30 TJ = 125 °C
20 TJ = 25 °C
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
93495_09
VFM (V)
Fig. 9 - Typical Antiparallel Diode Forward Characteristics
160
140
120
100
DC
80
60
40
20
0
0 2 4 6 8 10 12 14 16 18
93495_10
IF - Continuous Forward Current (A)
Fig. 10 - Maximum DC Antiparallel Diode Forward Current vs.
Case Temperature per Junction
Revision: 18-Oct-13
5 Document Number: 93495
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
DIMENSIONS in millimeters
Front view
55 ± 0.3
Ø 1 ± 0.1
M4
EMIPAK2
Outline Dimensions
Vishay Semiconductors
Pins position
with tolerance
Ø 0.4
15.2
12.7
8.9
5.1 7.6 7.6
3.8
1.3
14
11.4
10.2
6.4
3.8
2.6
Ø 4.3
Top view
Side view
20.5 ± 1
3 ref.
Ø2
Ø5
FF
16.8
23.8
40.6
58 ± 0.3
Detail “A”
Ceramic gap
Flat metal plate or
with optional M4 thread
Detail “A” Scale 10:1
0.1
2.5 8.9
6.3
10.1 12.7
11.4
16.5
20.3
16.5
20.3
24.1 24.1
1.3
5.1
Document Number: 95436
Revision: 27-Jan-11
For technical questions, contact: [email protected]
www.vishay.com
1
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet VS-EMG050J60N.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| VS-EMG050J60N | Dual Mode PFC | Vishay |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |