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PDF VS-GT300FD060N Data sheet ( Hoja de datos )
| Número de pieza | VS-GT300FD060N | |
| Descripción | DIAP Low Profile 3-Levels Half-Bridge Inverter Stage | |
| Fabricantes | Vishay | |
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www.vishay.com
VS-GT300FD060N
Vishay Semiconductors
DIAP Low Profile 3-Levels Half-Bridge Inverter Stage, 300 A
PRODUCT SUMMARY
VCES
VCE(ON) typical
at IC = 300 A
IC at TC = 25 °C
Package
Circuit
600 V
1.72 V
379 A
DIAP low Profile
Three Levels Half Brigde
Inverter Stage
FEATURES
• Trench plus Field Stop IGBT technology
• FRED Pt® antiparallel and clamping diodes
• Short circuit capability
• Speed 4 kHz to 30 kHz
• Low stray internal inductances
• Low switching loss
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATION
• Solar converters
• Uninterruptable power supplies
BENEFITS
• Direct mounting on heatsink
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCE(sat)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Operating junction temperature
Storage temperature range
RMS isolation voltage
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
Continuous collector current
Power dissipation
D5 - D6 CLAMPING DIODE
TJ
TStg
VISOL
VCES
VGES
ICM
ILM
IC
PD
TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Repetitive peak reverse voltage
Single pulse forward current
Diode continuous forward current
Power dissipation
D - D2 - D3 - D4 AP DIODE
VRRM
IFSM
IF
PD
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Single pulse forward current
Diode continuous forward current
Power dissipation
IFSM 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
IF
TC = 25 °C
TC = 80 °C
PD
TC = 25 °C
TC = 80 °C
Note
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
MAX.
175
- 40 to 175
3500
600
20
650
650
379
288
1250
792
600
800
215
161
500
317
800
215
161
500
317
UNITS
°C
V
A
W
V
A
W
A
W
Revision: 10-Jun-13
1 Document Number: 93569
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
100
10 175 °C
1
0.1
0.01
125 °C
0.001
0.0001
25 °C
0.00001
100 200 300 400 500 600
VCES (V)
Fig. 7 - Typical Trench IGBT Zero Gate Voltage Collector Current
600
550
500
450
400
350
300
250
200
150
100
50
0
0
TJ = 175 °C
TJ = 125 °C
0.5 1 1.5 2
TJ = 25 °C
2.5 3 3.5 4
VFM (V)
Fig. 8 - Typical Diode Forward Characteristics
200
180
160
140
120 DC
100
80
60
40
20
0
0 40 80 120 160 200 240
IF - Continuous Forward Current (A)
Fig. 9 - Maximum Diode Forward Current vs. Case Temperature
VS-GT300FD060N
Vishay Semiconductors
100
10 TJ = 175 °C
1
TJ = 125 °C
0.1
0.01
0.001
0.0001
TJ = 25 °C
0.00001
100 200 300 400 500 600
VCES (V)
Fig. 10 - Typical Diode Reverse Leakage Current
3.8
3.4
3.0
2.6 EOFF
2.2
EON
1.8
1.4
1.0
40 60 80 100 120 140 160
IC (A)
Fig. 11 - Typical Trench IGBT Energy Loss vs. IC,
TJ = 125 °C, VCC = 300 V, Rg = 10 , VGE = 15 V, L = 500 μH
1000
td(on)
tf
100
td(off)
tr
10
40 60 80 100 120 140 160
IC (A)
Fig. 12 - Typical IGBT Switching Time vs. IC,
TJ = 125 °C, VCC = 300 V, Rg = 10 , VGE = 15 V, L = 500 μH
Revision: 10-Jun-13
5 Document Number: 93569
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
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| PDF Descargar | [ Datasheet VS-GT300FD060N.PDF ] | |
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