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PDF VS-ETF075Y60U Data sheet ( Hoja de datos )

Número de pieza VS-ETF075Y60U
Descripción EMIPAK-2B PressFit Power Module
Fabricantes Vishay　
Logotipo Vishay Logotipo



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www.vishay.com
VS-ETF075Y60U
Vishay Semiconductors
EMIPAK-2B PressFit Power Module
3-Levels Half-Bridge Inverter Stage, 75 A
EMIPAK-2B
(package example)
PRODUCT SUMMARY
Q1 - Q4 IGBT STAGE
VCES
600 V
VCE(ON) typical at IC = 75 A
1.7 V
IC at TC = 89 °C
75 A
Q2 - Q3 IGBT STAGE
VCES
VCE(ON) typical at IC = 75 A
IC at TC = 122 °C
Package
600 V
1.56 V
75 A
EMIPAK-2B
Circuit
3-Levels Half Bridge Inverter Stage
FEATURES
• Trench IGBT technology
• FRED Pt® clamping diodes
• PressFit pins technology
• Exposed Al2O3 substrate with low thermal
resistance
• Short circuit rated
• Square RBSOA
• Integrated thermistor
• Operating frequency up to 20 kHz
• Low internal inductances
• Low switching loss
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
VS-ETF075Y60U is an integrated solution for a multi level
inverter stage in a single package. The EMIPAK-2B package
is easy to use thanks to the PressFit pins and the exposed
substrate provides improved thermal performance. The
optimized layout also helps to minimize stray parameters,
allowing for better EMI performance.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Operating junction temperature
Storage temperature range
RMS isolation voltage
Q1 - Q4 IGBT
TJ
TStg
VISOL
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
VCES
VGES
ICM
ILM (1)
Continuous collector current
IC
Power dissipation
Q2 - Q3 IGBT
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
Continuous collector current
PD
VCES
VGES
ICM
ILM (1)
IC
Power dissipation
PD
TEST CONDITIONS
TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s
TC = 25 °C
TC = 80 °C
TSINK = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TSINK = 80 °C
TC = 25 °C
TC = 80 °C
MAX.
175
-40 to 150
3500
600
20
200
200
109
80
40
294
186
600
20
250
250
154
113
50
405
257
UNITS
°C
V
V
A
A
W
V
A
A
W
Revision: 27-Jun-14
1 Document Number: 94685
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 page




VS-ETF075Y60U pdf
www.vishay.com
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
D5 - D6 CLAMPING DIODE
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
D1 - D2 - D3 - D4 AP DIODE
trr VR = 200 V
Irr IF = 50 A
Qrr dl/dt = 500 A/μs
trr VR = 200 V
Irr IF = 50 A
Qrr dl/dt = 500 A/μs, TJ = 125 °C
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
trr VR = 200 V
Irr IF = 50 A
Qrr dl/dt = 500 A/μs
trr VR = 200 V
Irr IF = 50 A
Qrr dl/dt = 500 A/μs, TJ = 125 °C
Note
(1) Energy losses include “tail” and diode reverse recovery.
VS-ETF075Y60U
Vishay Semiconductors
MIN. TYP. MAX. UNITS
- 59 -
- 8.5 -
- 257 -
- 110 -
- 18.5 -
- 1020 -
ns
A
nC
ns
A
nC
- 108 -
- 19.5 -
- 1062 -
- 174 -
- 31 -
- 2716 -
ns
A
nC
ns
A
nC
INTERNAL NTC - THERMISTOR SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Resistance
B-constant
Temperature range
R25
R125
B
TJ = 25 °C
TJ = 125 °C
R2 = R1e [B(1/T2 - 1/T1)]
Maximum operating temperature
Dissipation constant
Thermal time constant
TYP.
5000 ± 5 %
493 ± 5 %
3375 ± 5 %
-40 to 125
220
2
8
UNITS
K
°C
mW/°C
s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Q1 - Q4 IGBT - Junction to case thermal resistance (per switch)
Q2 - Q3 IGBT - Junction to case thermal resistance (per switch)
D5 - D6 Clamping diode - Junction to case thermal resistance (per diode)
D1 - D2 - D3 - D4 AP diode - Junction to case thermal resistance (per diode)
Q1 - Q4 IGBT - Case to sink thermal resistance (per switch)
Q2 - Q3 IGBT - Case to sink thermal resistance (per switch)
D5 - D6 Clamping diode - Case to sink thermal resistance (per diode)
D1 - D2 - D3 - D4 AP diode - Case to sink thermal resistance (per diode)
Case to sink thermal resistance per module
Mounting torque (M4)
Weight
Note
(1) Mounting surface flat, smooth, and greased
SYMBOL
RthJC
RthCS (1)
MIN.
-
-
-
-
-
-
-
-
-
2
-
TYP.
-
-
-
-
0.84
0.8
1.16
1.12
0.1
-
45
MAX.
0.51
0.37
0.86
1.4
-
-
-
-
-
3
-
UNITS
°C/W
°C/W
Nm
g
Revision: 27-Jun-14
5 Document Number: 94685
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

5 Page





VS-ETF075Y60U arduino
www.vishay.com
VS-ETF075Y60U
Vishay Semiconductors
150
135
120
105
90
75
60
45
30
15
0
0
TJ = 150 °C
TJ = 175 °C
TJ = 25 °C
TJ = 125 °C
0.4 0.8 1.2 1.6 2
2.4
VFM (V)
Fig. 29 - Typical D1 - D2 - D3 - D4 Antiparallel Diode
Forward Characteristics
180
160
140
120 DC
100
80
60
40
20
0
0 10 20 30 40 50 60 70 80
IF - Continuous Forward Current (A)
Fig. 30 - Maximum D1 - D2 - D3 - D4 Antiparallel Diode
Forward Current vs. Case Temperature
250
230
210
190 125 °C
170
150
130
25 °C
110
90
100 200 300 400 500
dIFdt (A/μs)
Fig. 31 - Typical D1 - D2 - D3 - D4 Antiparallel Diode
Reverse Recovery Time vs. dIF/dt
Vrr = 200 V, IF = 50 A
35
30 125 °C
25
20
25 °C
15
10
5
0
100 200 300 400 500
dIF/dt (A/us)
Fig. 32 - Typical D1 - D2 - D3 - D4 Antiparallel Diode
Reverse Recovery Current vs. dIF/dt
Vrr = 200 V, IF = 50 A
3000
2700
2400
125 °C
2100
1800
1500
1200
900
25 °C
600
300
100 200 300 400 500
dIFdt (A/μs)
Fig. 33 - Typical D1 - D2 - D3 - D4 Antiparallel Diode
Reverse Recovery Charge vs. dIF/dt
Vrr = 200 V, IF = 50 A
Revision: 27-Jun-14
11 Document Number: 94685
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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