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PDF VS-GB50YF120N Data sheet ( Hoja de datos )

Número de pieza VS-GB50YF120N
Descripción IGBT Fourpack Module
Fabricantes Vishay 
Logotipo Vishay Logotipo



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No Preview Available ! VS-GB50YF120N Hoja de datos, Descripción, Manual

www.vishay.com
VS-GB50YF120N
Vishay Semiconductors
IGBT Fourpack Module, 50 A
ECONO2 4PACK
PRODUCT SUMMARY
VCES
IC at TC = 66 °C
VCE(on) (typical)
Package
Circuit
1200 V
50 A
3.49 V
ECONO2
4 PACK
FEATURES
• Square RBSOA
• HEXFRED® low Qrr, low switching energy
• Positive VCE(on) temperature coefficient
• Copper baseplate
• Low stray inductance design
• Speed 8 kHz to 60 kHz
• Designed and qualified for industrial market
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Benchmark efficiency for SMPS appreciation in particular
HF welding
• Rugged transient performance
• Low EMI, requires less snubbing
• Direct mounting to heatsink space saving
• PCB solderable terminals
• Low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
See fig. C.T.5
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Diode maximum forward current
Gate to emitter voltage
IFM
VGE
Maximum power dissipation (IGBT)
PD
Maximum operating junction temperature
Storage temperature range
Isolation voltage
TJ
TStg
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
MAX.
1200
66
44
150
150
40
25
150
± 20
330
180
150
-40 to +125
AC 2500 (min)
UNITS
V
A
V
W
°C
V
Revision: 17-Apr-14
1 Document Number: 93653
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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VS-GB50YF120N pdf
www.vishay.com
VS-GB50YF120N
Vishay Semiconductors
1
TJ = 125°C
0.1
0.01
TJ = 25°C
0.001
400
600
800
1000
1200
VCES (V)
Fig. 11 - Typical Zero Gate Voltage Collector Current
5.5
5 TJ = 25°C
4.5
4
3.5 TJ = 125°C
3
2.5
2
0 0.2 0.4 0.6 0.8 1
IC (mA)
Fig. 12 - Typical Threshold Voltage
4.5
4
3.5 EON
3
2.5
EOFF
2
1.5
1
0.5
0
20 40 60 80 100
IC (A)
Fig. 13 - Typical Energy Loss vs. IC
TJ = 125 °C; L = 200 μH; VCE = 600 V, RG= 5 Ω; VGE = 15 V
1
tF
0.1
tdOFF
tdON
tR
0.01
0
20 40 60 80 100
IC (A)
Fig. 14 - Typical Switching Time vs. IC
TJ = 125 °C; L = 200 μH; VCE = 600 V, RG = 5 Ω; VGE = 15 V
12
10
8 125°C
6
4 25°C
2
0
0 20 40 60 80 100
dIF/ dt (A/µs)
Fig. 15 - Typical Diode IREC vs. dIF/dt
VCC = 600 V; IF = 50 A
800
700
600
500
125°C
400
300
200
25°C
100
0
0 20 40 60 80 100
dIF/ dt (A/µs)
Fig. 16 - Typical Diode trr vs. dIF/dt
VCC = 600 V; IF = 50 A
Revision: 17-Apr-14
5 Document Number: 93653
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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