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PDF VS-GT400TH120U Data sheet ( Hoja de datos )
| Número de pieza | VS-GT400TH120U | |
| Descripción | Molding Type Module IGBT | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-GT400TH120U
Vishay Semiconductors
Molding Type Module IGBT,
2-in-1 Package, 1200 V, 400 A
Double INT-A-PAK
PRODUCT SUMMARY
VCES
IC at TC = 80 °C
VCE(on) (typical)
at IC = 400 A, 25 °C
Package
Circuit
1200 V
400 A
1.90 V
DIAP
Half Bridge
FEATURES
• Low VCE(on) trench IGBT technology
• 10 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Inverter for motor drive
• AC and DC servo drive amplifier
• Uninterruptible power supply (UPS)
DESCRIPTION
Vishay’s IGBT power module provides ultralow conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
VCES
Gate to emitter voltage
VGES
Collector current
TC = 25 °C
IC
TC = 80 °C
Pulsed collector current
ICM tp = 1 ms
Diode continuous forward current
IF
Diode maximum forward current
IFM tp = 1 ms
Maximum power dissipation
PD TJ = 175 °C
RMS isolation voltage
Operating junction temperature range
VISOL
TJ
f = 50 Hz, t = 1 min
MAX.
1200
± 30
750
400
800
400
800
2344
2500
-40 to +150
UNITS
V
A
W
V
°C
Revision: 03-Jul-14
1 Document Number: 94854
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VS-GT400TH120U
Vishay Semiconductors
40
35
30
25 Erec
20
15
10 VCC = 600 V
IF = 400 A
5 VGE = -15 V
TJ = 125 °C
0
02 4 6
8 10 12 14 16 18 20
Rg (Ω)
Fig. 9 - Diode Switching Loss vs. Rg
0.1
Diode
0.01
0.001
0.001
i: 1 2 3 4
r i [K/W]: 0.0059 0.0324 0.0313 0.0284
τ i [s]:
0.01 0.02 0.05 0.1
0.01 0.1
1
t (s)
Fig. 10 - Diode Transient Thermal Impedances
CIRCUIT CONFIGURATION
1
2
6
7
3
5
4
10
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95538
Revision: 03-Jul-14
5 Document Number: 94854
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet VS-GT400TH120U.PDF ] | |
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