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Número de pieza | VS-GB100TH120U | |
Descripción | Molding Type Module IGBT | |
Fabricantes | Vishay | |
Logotipo | ||
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VS-GB100TH120U
Vishay Semiconductors
Molding Type Module IGBT,
2 in 1 Package, 1200 V and 100 A
Double INT-A-PAK
PRODUCT SUMMARY
VCES
IC at TC = 80 °C
VCE(on) (typical)
at IC = 100 A, 25 °C
Package
Circuit
1200 V
100 A
3.10 V
Double INT-A-PAK
Half bridge
FEATURES
• NPT IGBT technology
• 10 μs short circuit capability
• Low switching losses
• Rugged with ultrafast performance
• VCE(on) with positive temperature coefficient
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Switching mode power supplies
• Inductive heating
• Electronic welder
DESCRIPTION
Vishay’s IGBT power module provides ultrafast switching
speed as well as short circuit ruggedness. It is designed for
applications such as electronic welders and inductive
heating.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
VCES
Gate to emitter voltage
VGES
Collector current
TC = 25 °C
IC
TC = 80 °C
Pulsed collector current
ICM (1)
tp = 1 ms
Diode continuous forward current
IF
Diode maximum forward current
IFM(1)
Maximum power dissipation
PD TJ = 150 °C
Isolation voltage
VISOL
f = 50 Hz, t = 1 min
Note
(1) Repetitive rating: Pulse width limited by maximum junction temperature.
MAX.
1200
± 20
200
100
200
100
200
1136
2500
UNITS
V
A
W
V
Revision: 03-Jul-14
1 Document Number: 93413
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page www.vishay.com
200
175
150 TJ = 25 °C
125
100
75 TJ = 125 °C
50
25
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VF (V)
Fig. 7 - Diode Typical Forward Characteristics
VS-GB100TH120U
Vishay Semiconductors
12
VCC = 600 V
10
Rg = 5.6 Ω
VGE = ± 15 V
TJ = 125 °C
8
6 Erec
4
2
0
0 50 100 150 200
IF (A)
Fig. 8 - Diode Switching Loss vs. IF
8
7
6 Erec
5
4
3
VCC = 600 V
2 IF = 100 A
1
VGE = ± 15 V
TJ = 125 °C
0
0 10 20 30 40 50 60
Rg (Ω)
Fig. 9 - Diode Switching Loss vs. Rg
100
DIODE
10-1
10-2
10-3
10-3
10-2
10-1
10-0
t (s)
Fig. 10 - Diode Transient Thermal Impedance
101
Revision: 03-Jul-14
5 Document Number: 93413
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet VS-GB100TH120U.PDF ] |
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