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PDF VS-GT50TP120N Data sheet ( Hoja de datos )
| Número de pieza | VS-GT50TP120N | |
| Descripción | Molding Type Module IGBT | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-GT50TP120N
Vishay Semiconductors
Molding Type Module IGBT,
2 in 1 Package, 1200 V, 50 A
INT-A-PAK
FEATURES
• Low VCE(on) trench IGBT technology
• Low switching losses
• 10 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VCES
IC at TC = 80 °C
VCE(on) (typical)
at IC = 50 A, 25 °C
Package
Circuit
1200 V
50 A
1.65 V
INT-A-PAK
Half Bridge
TYPICAL APPLICATIONS
• UPS (Uninterruptable Power Supply)
• Electronic welders
• Switching mode power supplies
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
VCES
Gate to emitter voltage
VGES
Collector current
Pulsed collector current
IC
ICM (1)
TC = 25 °C
TC = 80 °C
tp = 1 ms
Diode continuous forward current
Diode maximum forward current
IF
IFM (1)
Maximum power dissipation
PD TJ = 175 °C
RMS isolation voltage
VISOL
f = 50 Hz, t = 1 min
Note
(1) Repetitive rating: Pulse width limited by maximum junction temperature.
MAX.
1200
± 20
100
50
100
50
100
405
2500
UNITS
V
A
W
V
Revision: 17-May-13
1 Document Number: 94824
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VS-GT50TP120N
Vishay Semiconductors
3
2.5
2 Erec
1.5
1
VCC = 600 V
0.5
IF = 50 A
VGE = - 15 V
TJ = 125 °C
0
0 10 20 30 40 50
Rg (Ω)
Fig. 9 - Diode Switching Loss vs. RG
60
100
Diode
10-1
10-2
10-3
CIRCUIT CONFIGURATION
Dimensions
10-2
10-1
100
t (s)
Fig. 10 - Diode Transient Thermal Impedance
101
12
6
7
3
5
4
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95524
Revision: 17-May-13
5 Document Number: 94824
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet VS-GT50TP120N.PDF ] | |
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