|
|
PDF VS-GB200TS60NPbF Data sheet ( Hoja de datos )
| Número de pieza | VS-GB200TS60NPbF | |
| Descripción | Ultrafast Speed IGBT | |
| Fabricantes | Vishay | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de VS-GB200TS60NPbF (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
www.vishay.com
VS-GB200TS60NPbF
Vishay Semiconductors
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 209 A
INT-A-PAK
PRODUCT SUMMARY
VCES
600 V
IC DC
209 A
VCE(on) at 200 A, 25 °C
2.6 V
Package
INT-A-PAK
Circuit
Half Bridge with SMD Gate Resistor
FEATURES
• Generation 5 Non Punch Through (NPT)
technology
• Ultrafast: Optimized for hard switching speed
8 kHz to 60 kHz
• Low VCE(on)
• 10 μs short circuit capability
• Square RBSOA
• Positive VCE(on) temperature coefficient
• HEXFRED® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al2O3 DBC
• UL approved file E78996
• Designed for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Gate to emitter voltage
VGE
Maximum power dissipation
PD
Isolation voltage
Operating junction temperature range
VISOL
TJ
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
600
209
142
400
400
178
121
± 20
781
438
2500
-40 to +150
UNITS
V
A
V
W
V
°C
Revision: 29-Apr-14
1 Document Number: 94503
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VS-GB200TS60NPbF
Vishay Semiconductors
100
90 10 ohm
80
70
27 ohm
60
50
47 ohm
40
30
20
40
80 120 160 200
IF (A)
Fig. 11 - Typical Diode Irr vs. IF
TJ = 125 °C
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
5
10 15 20 25 30 35 40 45 50
RG (Ω)
Fig. 14 - Typical Switching Losses vs. Gate Resistance
TJ = 125 °C, L = 200 μH, Rg = 10 ,
VCC = 360 V, VGE = 15 V
100
90
80
70
60
50
40
30
0
10 20 30 40 50
RG (Ω)
Fig. 12 - Typical Diode Irr vs. Rg
TJ = 125 °C, IF = 200 A
100
90
80
70
60
50
600 700 800 900 1000 1100 1200 1300
dIF / dt (A/μs)
Fig. 13 - Typical Diode Irr vs. dIF/dt
TJ = 125 °C, VCC = 360 V, IF = 200 A, VGE = 15 V
100
Ic = 200A
10
Ic = 100A
Ic = 50A
1
0 25 50 75 100 125
TJ - Junction Temperature (°C)
Fig. 15 - Typical Switching Losses vs.
Junction Temperature;
L = 200 μH, Rg = 10 , VCC = 360 V, VGE = 15 V
12
11
10
9
8
7
6
5
4
3
2
40 60 80 100 120 140 160 180 200 220
IC (A)
Fig. 16 - Typical Switching Losses vs.
Collector to Emitter Current;
TJ = 125 °C,Rg1 = 10 , Rg2 = 0 , VCC = 360 V, VGE = 15 V
Revision: 29-Apr-14
5 Document Number: 94503
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet VS-GB200TS60NPbF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| VS-GB200TS60NPbF | Ultrafast Speed IGBT | Vishay |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |