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PDF VS-GB50NA120UX Data sheet ( Hoja de datos )
| Número de pieza | VS-GB50NA120UX | |
| Descripción | IGBT | |
| Fabricantes | Vishay | |
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www.vishay.com
VS-GB50NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
SOT-227
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 50 A, 25 °C
Package
Circuit
1200 V
50 A at 92 °C
3.22 V
SOT-227
High side switch
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
• HEXFRED® clamping diode
• Positive VCE(on) temperature coefficient
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
VCES
Continuous collector current
TC = 25 °C
IC
TC = 80 °C
Pulsed collector current
ICM
Clamped inductive load current
ILM
Diode continuous forward current
TC = 25 °C
IF
TC = 80 °C
Gate to emitter voltage
VGE
Power dissipation, IGBT
Power dissipation, diode
RMS isolation voltage
PD
PD
VISOL
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
1200
84
57
150
150
76
52
± 20
431
242
278
156
2500
UNITS
V
A
V
W
V
Revision: 30-Jul-13
1 Document Number: 93101
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VS-GB50NA120UX
Vishay Semiconductors
12
10
Eon
8
6
4
2 Eoff
0
0 10 20 30 40 50
1000
Rg (Ω)
Fig. 11 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, IC = 50 A, L = 500 μH,
VCC = 600 V, VGE = 15 V
250
230
210
190
170
150
130
110
90
70
100
TJ = 125 °C
TJ = 25 °C
1000
dIF/dt (A/µs)
Fig. 13 - Typical trr Diode vs. dIF/dt
VR = 200 V, IF = 50 A
40
100
td(off)
td(on)
tf
35
30
25 TJ = 125 °C
20
tr 15 TJ = 25 °C
10
5
10
0
10 20 30 40 50
0
100
1000
Rg (Ω)
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 600 V,
IC = 50 A, VGE = 15 V
2650
dIF/dt (A/µs)
Fig. 14 - Typical Irr Diode vs. dIF/dt
VR = 200 V, IF = 50 A
2400
2150
TJ = 125 °C
1900
1650
1400
1150
900 TJ = 25 °C
650
400
100
1000
dIF/dt (A/µs)
Fig. 15 - Typical Qrr Diode vs. dIF/dt, VR = 200 V, IF = 50 A
Revision: 30-Jul-13
5 Document Number: 93101
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet VS-GB50NA120UX.PDF ] | |
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