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PDF VS-GB50LA120UX Data sheet ( Hoja de datos )
| Número de pieza | VS-GB50LA120UX | |
| Descripción | IGBT | |
| Fabricantes | Vishay | |
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www.vishay.com
VS-GB50LA120UX
Vishay Semiconductors
"Low Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
SOT-227
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 50 A, 25 °C
Package
Circuit
1200 V
50 A at 92 °C
3.22 V
SOT-227
Chopper low side switch
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
• HEXFRED® clamping diode
• Positive VCE(on) temperature coefficient
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
VCES
IC
ICM
ILM
IF
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Gate to emitter voltage
VGE
Power dissipation, IGBT
TC = 25 °C
PD
TC = 80 °C
Power dissipation, diode
TC = 25 °C
PD
TC = 80 °C
RMS isolation voltage
VISOL Any terminal to case, t = 1 min
MAX.
1200
84
57
150
150
76
52
± 20
431
242
278
156
2500
UNITS
V
A
V
W
V
Revision: 30-Jul-13
1 Document Number: 93102
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VS-GB50LA120UX
Vishay Semiconductors
12
10
Eon
8
6
4
2 Eoff
0
0 10 20 30 40 50
1000
Rg (Ω)
Fig. 11 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, IC = 50 A, L = 500 μH,
VCC = 600 V, VGE = 15 V
250
230
210
190
170
150
130
110
90
70
100
TJ = 125 °C
TJ = 25 °C
1000
dIF/dt (A/µs)
Fig. 13 - Typical trr Diode vs. dIF/dt
VR = 200 V, IF = 50 A
40
100
td(off)
td(on)
tf
35
30
25 TJ = 125 °C
20
tr 15 TJ = 25 °C
10
5
10
0
10 20 30 40 50
0
100
1000
Rg (Ω)
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 600 V,
IC = 50 A, VGE = 15 V
2650
dIF/dt (A/µs)
Fig. 14 - Typical Irr Diode vs. dIF/dt
VR = 200 V, IF = 50 A
2400
2150
TJ = 125 °C
1900
1650
1400
1150
900 TJ = 25 °C
650
400
100
1000
dIF/dt (A/µs)
Fig. 15 - Typical Qrr Diode vs. dIF/dt, VR = 200 V, IF = 50 A
Revision: 30-Jul-13
5 Document Number: 93102
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet VS-GB50LA120UX.PDF ] | |
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