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PDF VS-GT140DA60U Data sheet ( Hoja de datos )
| Número de pieza | VS-GT140DA60U | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | Vishay | |
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VS-GT140DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 140 A
SOT-227
PRODUCT SUMMARY
VCES
600 V
IC DC
140 A at 90 °C (1)
VCE(on) typical at 100 A, 25 °C
1.72 V
IF DC
71 A at 90 °C
Package
SOT-227
Circuit
Single Switch Diode
Note
(1) Maximum collector current admitted is 100 A, to do not exceed
the maximum temperature of terminals
FEATURES
• Trench IGBT technology with positive
temperature coefficient
• Square RBSOA
• 3 μs short circuit capability
• FRED Pt® antiparallel diodes with ultrasoft reverse
recovery
• TJ maximum = 175 °C
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Speed 4 kHz to 30 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
VCES
Continuous collector current
IC (1)
TC = 25 °C
TC = 90 °C
Pulsed collector current
ICM
Clamped inductive load current
ILM
Diode continuous forward current
TC = 25 °C
IF
TC = 90 °C
Gate-to-emitter voltage
VGE
Power dissipation, IGBT
TC = 25 °C
PD
TC = 90 °C
Power dissipation, diode
TC = 25 °C
PD
TC = 90 °C
Isolation voltage
VISOL
Any terminal to case, t = 1 min
Note
(1) Maximum collector current admitted is 100 A, to do not exceed the maximum temperature of terminals
MAX.
600
200
140
350
350
104
71
± 20
652
370
238
135
2500
UNITS
V
A
V
W
V
Revision: 13-Sep-13
1 Document Number: 94772
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
Eon
Eoff
10 20 30 40 50
Rg (Ω)
Fig. 11 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, IC = 100 A, L = 500 μH,
VCC = 360 V, VGE = 15 V, Diode used: 60APH06
1
td(on)
td(off)
tr
0.1
tf
0.01
0
10 20 30 40 50 60
Rg (Ω)
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 360 V,
IC = 100 A, VGE = 15 V, Diode used: 60APH06
200
180
160 125 °C
VR = 200 V
IF = 50 A
140
120
100
80 25 °C
60
40
100
dIF/dt (A/μs)
1000
Fig. 13 - Typical Reverse RecoveryTime vs. dIF/dt of Diode
VS-GT140DA60U
Vishay Semiconductors
2000
1500
1000
VR = 200 V
IF = 50 A
125 °C
500
25 °C
0
100
1000
dIF/dt (A/μs)
Fig. 14 - Typical Stored Charge vs. dIF/dt of Diode
35
VR = 200 V
30 IF = 50 A
25
20
125 °C
15
10 25 °C
5
0
100 1000
dIF/dt (A/μs)
Fig. 15 - Typical Reverse Recovery Current vs. dIF/dt of Diode
Revision: 13-Sep-13
5 Document Number: 94772
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet VS-GT140DA60U.PDF ] | |
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