PDF VS-HFA70EA120 Data sheet ( Hoja de datos )

Número de pieza	VS-HFA70EA120
Descripción	Ultrafast Soft Recovery Diode
Fabricantes	Vishay
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No Preview Available ! www.vishay.com VS-HFA70EA120 Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 70 A SOT-227 FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Antiparallel diodes • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly • Designed and qualified for industrial level • UL approved file E78996 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VR VF (typical) trr (typical) IF(DC) at TC, per module Package 1200 V 2.2 V 48 ns 70 A at 121 °C SOT-227 DESCRIPTION/APPLICATIONS This SOT-227 modules with HEXFRED® rectifier are in antiparallel configuration. The antiparallel configuration is used for simple series rectifier and high voltage application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built.  These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage Continuous forward current, per leg Single pulse forward current VR IF IFSM Maximum power dissipation, per leg PD RMS isolation voltage Operating junction and storage  temperature range VISOL TJ, TStg TEST CONDITIONS TC = 121 °C TJ = 25 °C TC = 25 °C TC = 100 °C Any terminal to case, t = 1 minute MAX. 1200 35 350 357 143 2500 - 55 to 150 UNITS V A W V °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. Cathode to anode  breakdown voltage VBR IR = 100 μA 1200 Forward voltage, per leg VFM Reverse leakage current, per leg IRM IF = 30 A IF = 60 A IF = 30 A, TJ = 125 °C IF = 60 A, TJ = 125 °C IF = 30 A, TJ = 150 °C IF = 60 A, TJ = 150 °C VR = VR rated TJ = 125 °C, VR = VR rated TJ = 150 °C, VR = VR rated - - - - - - - - - TYP. - 2.2 2.8 2.13 2.70 2.04 2.65 2.0 1.6 5 MAX. - 3.0 4.0 - - - - 75 5 10 UNITS V μA mA Revision: 23-Jul-13 1 Document Number: 94747 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1 page www.vishay.com VS-HFA70EA120 Vishay Semiconductors VR = 200 V L = 70 μH 0.01 Ω D.U.T. dIF/dt adjust G D IRFP250 S Fig. 10 - Reverse Recovery Parameter Test Circuit IF 0 (3) trr ta tb (2) IRRM (4) Qrr 0.5 IRRM dI(rec)M/dt (5) (1) dIF/dt 0.75 IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Revision: 23-Jul-13 5 Document Number: 94747 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 5 Page

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