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PDF VS-200CNQ045PbF Data sheet ( Hoja de datos )
| Número de pieza | VS-200CNQ045PbF | |
| Descripción | High Performance Schottky Rectifiers | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-200CNQ045PbF
Vishay Semiconductors
High Performance Schottky Rectifier, 200 A
TO-244
Lug
terminal
anode 1
Lug
terminal
anode 2
Base common
cathode
PRODUCT SUMMARY
IF(AV)
VR
200 A
45 V
Package
TO-244
Circuit
Two diodes common cathode
FEATURES
• 150 °C TJ operation
• Center tap module
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• UL approved file E222165
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-200CNQ... center tap Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF 100 Apk, TJ = 125 °C (per leg)
TJ Range
VALUES
200
45
26 000
0.52
-55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
VRWM
VS-200CNQ045PbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
SYMBOL
per leg
per device
IF(AV)
TEST CONDITIONS
50 % duty cycle at TC = 116 °C, rectangular waveform
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
5 μs sine or 3 μs rect. pulse
Following any rated
IFSM load condition and with
10 ms sine or 6 ms rect. pulse rated VRRM applied
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
IAR
TJ = 25 °C, IAS = 17 A, L = 1 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
100
200
26 000
1550
135
20
UNITS
A
A
mJ
A
Revision: 26-Mar-14
1 Document Number: 94153
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
DIMENSIONS in millimeters (inches)
TO-244
13 (0.51)
35 (1.37) REF.
80 (3.15)
Outline Dimensions
Vishay Semiconductors
7 (0.27)
6 (0.23)
17.5 (0.69)
16.5 (0.65)
3
12.6 (0.5)
1
Ø 5.2 (Ø 0.20)
2
3
21 (0.82)
20 (0.78)
Ø 7.2 (Ø 0.28)
(2 places)
¼" - 20 UNC
9.6 (0.37) MIN.
93 (3.66) MAX.
Document Number: 95021
Revision: 25-Jun-07
For technical questions, contact: [email protected]
www.vishay.com
1
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet VS-200CNQ045PbF.PDF ] | |
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