(PDF) BAT24-02LS Datasheet - Silicon Schottky Diode

Número de pieza	BAT24-02LS
Descripción	Silicon Schottky Diode
Fabricantes	Infineon Technologies
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No Preview Available ! Silicon Schottky Diode • RF Schottky diode for mixer applications up to 26 GHz • Extremely low inductance combined with ultra low device capacitance • Very stable performance for all major parameters • Package size: 0.62 x 0.31 x 0.31 mm³ only • Pb-free (RoHS compliant) package BAT24-02LS BAT24-02LS 12 Type BAT24-02LS Package Configuration TSSLP-2-1 single, leadless Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Forward current Total power dissipation TS ≤ 73 °C Junction temperature Operating temperature range Storage temperature VR IF Ptot Tj Top Tstg Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS 1For calculation of RthJA please refer to Application Note Thermal Resistance LS(nH) Marking 0.2 ±0.05 S Value 4 110 100 Unit V mA mW 150 -55 ... 150 -55 ... 150 °C Value ≤ 770 Unit K/W 1 2011-06-15 1 page Package TSSLP-2-1 BAT24-02LS 5 2011-06-15 5 Page

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PDF BAT24-02LS Data sheet ( Hoja de datos )