PDF FGW30N120HD Data sheet ( Hoja de datos )

Número de pieza	FGW30N120HD
Descripción	Discrete IGBT
Fabricantes	Fuji Electric
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No Preview Available ! http://www.fujielectric.com/products/semiconductor/ FGW30N120HD Discrete IGBT Discrete IGBT (High-Speed V series) 1200V / 30A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Equivalent circuit Items Collector-Emitter Voltage Gate-Emitter Voltage DC Collector Current Pulsed Collector Current Turn-Off Safe Operating Area Diode Forward Current Diode Pulsed Current Short Circuit Withstand Time IGBT Max. Power Dissipation FWD Max. Power Dissipation Operating Junction Temperature Storage Temperature Symbols VCES VGES IC@25 IC@100 ICP - IF@25 IF@100 IFP tSC PD_IGBT PD_FWD Tj Tstg Characteristics 1200 ±20 53 30 90 90 36 20 90 5 260 125 -40 ~ +175 -55 ~ +175 Units Remarks V V A TC=25°C,Tj=150°C A TC=100°C,Tj=150°C A Note 1 A VCE≤1200V,Tj≤175°C A A A Note 1 µs VCC≤600V,VGE=12V Tj≤150°C W TC=25°C TC=25°C °C °C Gate Collector Emitter Note *1 : Pulse width limited by Tjmax. Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Collector-Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Symbols V(BR)CES ICES IGES VGE (th) VCE (sat) Cies Coes Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Conditions IC = 50μA, VGE = 0V VCE = 1200V, VGE = 0V Tj=25°C Tj=175°C VCE = 0V, VGE = ±20V VCE = +20V, IC = 30mA VGE = +15V, IC = 30A Tj=25°C Tj=175°C VCE=25V VGE=0V f=1MHz VCC = 600V IC = 30A VGE = 15V Tj = 25°C VCC = 600V IC = 30A VGE = 15V RG = 10Ω L = 500μH Energy loss include “tail” and FWD reverse recovery. Tj = 175°C VCC = 600V IC = 30A VGE = 15V RG = 10Ω L = 500μH Energy loss include “tail” and FWD reverse recovery. Characteristics min. typ. max. 1200 - - - - 250 - -2 - - 200 4.0 5.0 6.0 - 1.8 2.34 - 2.3 - - 2350 - - 105 - - 80 - - 230 - - 28 - - 28 - - 260 - - 38 - - 1.6 - - 1.5 - - 30 - - 30 - - 300 - - 65 - - 2.8 - - 2.5 - Units V µA mA nA V V pF nC ns mJ ns mJ 1 1 page FGW30N120HD Graph.13 FWD Forward voltage drop (VF-IF) 40 35 Tj=175℃ Tj=25℃ 30 25 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VF [V] Graph.15 Typical reverse recovery loss vs. IF Tj=175ºC, VCC=600V, L=500µH VGE=15V, RG=10Ω 4 3 2 1 0 0 10 20 30 40 50 IF [A] Discrete IGBT http://www.fujielectric.com/products/semiconductor/ Graph.14 Typical reverse recovery characteristics vs. IF Tj=175ºC, VCC=600V, L=500µH VGE=15V, RG=10Ω 800 8 600 trr 400 Qrr 200 6 4 2 00 0 10 20 30 40 IF [A] Graph.16 Reverse biased Safe Operating Area Tj≤175ºC, VGE=+15V/0V, RG=10Ω 150 100 50 0 0 200 400 600 800 1000 1200 1400 Collector-Emitter voltage : VCE [V] 5 5 Page

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