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PDF FGW35N60HD Data sheet ( Hoja de datos )
| Número de pieza | FGW35N60HD | |
| Descripción | Discrete IGBT | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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http://www.fujielectric.com/products/semiconductor/
FGW35N60HD
Discrete IGBT
Discrete IGBT (High-Speed V series)
600V / 35A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Uninterruptible power supply
Power coditionner
Power factor correction circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Equivalent circuit
Items
Collector-Emitter Voltage
Gate-Emitter Voltage
DC Collector Current
Pulsed Collector Current
Turn-Off Safe Operating Area
Diode Forward Current
Diode Pulsed Current
Short Circuit Withstand Time
IGBT Max. Power Dissipation
FWD Max. Power Dissipation
Operating Junction Temperature
Storage Temperature
Symbols
VCES
VGES
IC@25
IC@100
ICP
-
IF@25
IF@100
IFP
tSC
PD_IGBT
PD_FWD
Tj
Tstg
Characteristics
600
±20
64
35
105
105
30
15
105
5
230
80
-40 ~ +175
-55 ~ +175
Units
Remarks
V
V
A TC=25°C,Tj=150°C
A TC=100°C,Tj=150°C
A Note *1
A VCE≤600V,Tj≤175°C
A
A
A Note *1
µs
VCC≤300V,VGE=12V
Tj≤150°C
W
TC=25°C
TC=25°C
°C
°C
Gate
Collector
Emitter
Note *1 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Collector-Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Symbols
V(BR)CES
ICES
IGES
VGE (th)
VCE (sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Conditions
IC = 250μA, VGE = 0V
VCE = 600V, VGE = 0V
Tj=25°C
Tj=175°C
VCE = 0V, VGE = ±20V
VCE = +20V, IC = 35mA
VGE = +15V, IC = 35A
Tj=25°C
Tj=175°C
VCE=25V
VGE=0V
f=1MHz
VCC = 400V
IC = 35A
VGE = 15V
Tj = 25°C
VCC = 400V
IC = 35A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD reverse
recovery.
Tj = 175°C
VCC = 400V
IC = 35A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD reverse
recovery.
Characteristics
min. typ. max.
600 -
-
- - 250
- - 10
- - 200
4.0 5.0 6.0
- 1.50 1.95
- 1.80 -
- 2800 -
- 140 -
- 100 -
- 210 -
- 32 -
- 60 -
- 200 -
- 40 -
- 0.90 -
- 0.85 -
- 33 -
- 60 -
- 225 -
- 50 -
- 1.40 -
- 1.25 -
Units
V
µA
mA
nA
V
V
pF
nC
ns
mJ
ns
mJ
1
1 page  
FGW35N60HD
Graph.13
FWD Forward voltage drop (VF-IF)
30
25
20
Tj=175℃
Tj=25℃
15
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VF [V]
Graph.15
Typical reverse recovery loss vs. IF
Tj=175ºC, VCC=400V, L=500µH
VGE=15V, RG=10Ω
300
250
200
150
100
50
0
0 5 10 15 20 25 30 35
IF [A]
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.14
Typical reverse recovery characteristics vs. IF
Tj=175ºC, VCC=400V, L=500µH
VGE=15V, RG=10Ω
150 1.50
125 1.25
100
Qrr
75
trr
50
1.00
0.75
0.50
25 0.25
0 0.00
0 5 10 15 20 25 30 35
IF [A]
Graph.16
Reverse biased Safe Operating Area
Tj≤175ºC, VGE=+15V/0V, RG=10Ω
200
150
100
50
0
0 200 400 600 800
Collector-Emitter voltage : VCE [V]
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FGW35N60HD.PDF ] | |
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