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PDF 40MT120UH Data sheet ( Hoja de datos )

Número de pieza 40MT120UH
Descripción UltraFast NPT IGBT
Fabricantes International Rectifier 
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No Preview Available ! 40MT120UH Hoja de datos, Descripción, Manual

I27126 rev. C 02/03
"HALF-BRIDGE" IGBT MTP
40MT120UH
UltraFast NPT IGBT
Features
UltraFast Non Punch Through (NPT)
Technology
• Positive VCE(ON)Temperature Coefficient
• 10µs Short Circuit Capability
• HEXFRED TM Antiparallel Diodes with
UltraSoft Reverse Recovery
• Low Diode VF
• Square RBSOA
• Aluminum Nitride DBC
• Optional SMT Thermistor (NTC)
• Very Low Stray Inductance Design for
High Speed Operation
• UL approved (file E78996)
Benefits
Optimized for Welding, UPS and SMPS
Applications
• Rugged with UltraFast Performance
• Benchmark Efficiency above 20KHz
• Outstanding ZVS and Hard Switching
Operation
• Low EMI, requires Less Snubbing
• Excellent Current Sharing in Parallel
Operation
• Direct Mounting to Heatsink
• PCB Solderable Terminals
VCES = 1200V
IC = 80A
TC = 25°C
MMTP
Absolute Maximum Ratings
Parameters
VCES
IC
I CM
I LM
IF
I FM
VGE
VISOL
PD
Collector-to-Emitter Breakdown Voltage
Continuos Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
@ TC = 25°C
@ TC = 105°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 105°C
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation (only IGBT) @ TC = 25°C
@ TC = 100°C
Max
1200
80
40
160
160
21
160
± 20
2500
463
185
Units
V
A
V
W
www.irf.com
1

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40MT120UH pdf
40MT120UH
Bulletin I27126 rev. B 10/02
160
VGE = 18V
140 VGE = 15V
VGE = 12V
120 VGE = 10V
VGE = 8.0V
100
80
60
40
20
0
02
46
VCE (V)
8 10
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
160
VGE = 18V
140 VGE = 15V
VGE = 12V
120 VGE = 10V
VGE = 8.0V
100
80
60
40
20
0
02
46
VCE (V)
8 10
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
160
VGE = 18V
140 VGE = 15V
VGE = 12V
120 VGE = 10V
VGE = 8.0V
100
80
60
40
20
0
02
46
VCE (V)
8 10
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
www.irf.com
120
-40°C
100 25°C
125°C
80
60
40
20
0
0.0 1.0 2.0 3.0 4.0 5.0
VF (V)
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
5

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40MT120UH arduino
40MT120UH
Bulletin I27126 rev. B 10/02
L
L
0
DUT
VCC 80 V
1K
DUT
1000V
Rg
Fig. CT.1 - Gate Charge Circuit (turn-off)
Fig. CT.2 - RBSOA Circuit
Driver
D
C
DUT
900V
diode clamp /
DUT
- 5V
Rg
L
DUT /
DRIVER
VCC
Fig. CT.3 - S.C. SOA Circuit
www.irf.com
Fig. CT.4 - Switching Loss Circuit
11

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