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PDF C3318 Data sheet ( Hoja de datos )
| Número de pieza | C3318 | |
| Descripción | NPN Transistor - 2SC3318 | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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2SC3318
TRIPLE DIFFUSED PLANER TYPE
HIGH VOLTAGE,HIGH SPEED SWITCHING
Features
High voltage,High speed switching
High reliability
Applications
Switching regulators
Ultrasonic generators
High frequency inverters
General purpose power amplifiers
FUJI POWER TRANSISTOR
Outline Drawings
TO-3P
JEDEC
EIAJ
-
SC-65
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Collector-Base voltage
Collector-Emitter voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Base current
Collector power disspation
Operating junction temperature
Storage temperature
Symbol
VCBO
VCEO
VCEO(SUS)
VEBO
IC
IB
PC
Tj
Tstg
Ratings
500
400
400
7
10
3
80
+150
-65 to +150
Unit
V
V
V
V
A
A
W
°C
°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Collector-Base voltage
Collector-Emitter voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Base leakage current
Emitter-Base leakage current
D.C. current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
*1
Switching time
Symbol
VCBO
VCEO
VCEO(SUS)
VEBO
ICBO
IEBO
hFE
VCE(Sat)
VBE(Sat)
ton
tstg
tf
Test Conditions
ICBO = 1mA
ICEO = 10mA
IC = 0.2A
IEBO = 1mA
VCBO = 500V
VEBO = 7V
IC = 5A, VCE = 5V
IC = 5A, IB = 1A
IC = 5A, IB1 = 1A
IB2 = -2A, RL = 30 ohm
Pw = 20 µs Duty=<2%
Thermal characteristics
Item
Thermal resistance
Symbol
Rth(j-c)
Test Conditions
Junction to case
Min.
500
400
400
7
10
Typ.
-
-
-
-
Max.
1.0
1.0
Units
V
V
V
V
mA
mA
1.0 V
1.5 V
0.5 µs
1.5 µs
0.15 µs
Min. Typ.
Max. Units
1.55 °C/W
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet C3318.PDF ] | |
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