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PDF PESD5V0L5UF Data sheet ( Hoja de datos )
| Número de pieza | PESD5V0L5UF | |
| Descripción | Low capacitance unidirectional fivefold ESD protection diode arrays | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PESDxL5UF; PESDxL5UV;
PESDxL5UY
Low capacitance unidirectional fivefold ESD protection diode
arrays
Rev. 02 — 8 January 2008
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection diode
arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to
five unidirectional signal lines from the damage caused by ESD and other transients.
Table 1. Product overview
Type number
Package
NXP
PESD3V3L5UF
SOT886
PESD5V0L5UF
SOT886
PESD3V3L5UV
SOT666
PESD5V0L5UV
SOT666
PESD3V3L5UY
SOT363
PESD5V0L5UY
SOT363
JEITA
-
-
-
-
SC-88
SC-88
JEDEC
MO-252
MO-252
-
-
-
-
Package configuration
leadless ultra small
leadless ultra small
ultra small and flat lead
ultra small and flat lead
very small
very small
1.2 Features
I ESD protection of up to five lines
I Low diode capacitance
I Max. peak pulse power: PPP = 25 W
I Low clamping voltage: VCL = 12 V
I Ultra low leakage current: IRM = 5 nA
I ESD protection up to 20 kV
I IEC 61000-4-2; level 4 (ESD)
I IEC 61000-4-5 (surge); IPP = 2.5 A
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I Communication systems
I Portable electronics
I Subscriber Identity Module (SIM) card
protection
1 page  
NXP Semiconductors
PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
120
IPP
(%)
80
40
100 % IPP; 8 µs
001aaa630
e−t
50 % IPP; 20 µs
0
0 10 20 30 40
t (µs)
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
IPP
100 %
90 %
001aaa631
10 %
tr = 0.7 ns to 1 ns
30 ns
60 ns
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t
6. Characteristics
Table 9. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff voltage
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
IRM reverse leakage current
PESD3V3L5UF
PESD3V3L5UV
VRWM = 3.3 V
PESD3V3L5UY
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
VRWM = 5.0 V
VBR breakdown voltage
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
IR = 1 mA
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
Min Typ Max Unit
- - 3.3 V
- - 5.0 V
- 75 300 nA
- 5 25 nA
5.3 5.6 5.9 V
6.4 6.8 7.2 V
PESDXL5UF_V_Y_2
Product data sheet
Rev. 02 — 8 January 2008
© NXP B.V. 2008. All rights reserved.
5 of 17
5 Page 
NXP Semiconductors
8. Package outline
PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
1.05
0.95
0.6
0.5
1.5
1.4
0.5
3
2
1
4
5
6
0.40
0.32
Dimensions in mm
0.35
0.27
0.25
0.17
0.50
max
0.04
max
04-07-22
1.7
1.5
65
1.7 1.3
1.5 1.1
pin 1 index
0.6
0.5
4
0.3
0.1
12
0.5
1
Dimensions in mm
3
0.27
0.17
0.18
0.08
04-11-08
Fig 11. Package outline PESDxL5UF (SOT886)
Fig 12. Package outline PESDxL5UV (SOT666)
2.2
1.8
65
4 0.45
0.15
1.1
0.8
2.2 1.35
2.0 1.15
pin 1
index
12
0.65
1.3
Dimensions in mm
Fig 13. Package outline PESDxL5UY (SOT363/SC-88)
3
0.3
0.2
0.25
0.10
06-03-16
PESDXL5UF_V_Y_2
Product data sheet
Rev. 02 — 8 January 2008
© NXP B.V. 2008. All rights reserved.
11 of 17
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet PESD5V0L5UF.PDF ] | |
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