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PDF TDB6HK180N16RR Data sheet ( Hoja de datos )
| Número de pieza | TDB6HK180N16RR | |
| Descripción | IGBT Module | |
| Fabricantes | Infineon | |
| Logotipo |  |
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TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
TDB6HK180N16RR
EconoPACK™2Modul
EconoPACK™2module
VorläufigeDaten/PreliminaryData
TypischeAnwendungen
• AktiverGleichrichter
• HalbgesteuerteB6-Brücke
MechanischeEigenschaften
• 2,5kVAC1minIsolationsfestigkeit
• Al2O3 Substrat mit kleinem thermischen
Widerstand
• HoheLeistungsdichte
• HohemechanischeRobustheit
• IsolierteBodenplatte
• KompaktesDesign
• Kupferbodenplatte
• Lötverbindungstechnik
• RoHSkonform
• Standardgehäuse
VCES = 1200V
IC nom = 180A / ICRM = 360A
TypicalApplications
• ActiveRectifier
• HalfControlledB6-bridge
MechanicalFeatures
• 2.5kVAC1minInsulation
• Al2O3SubstratewithLowThermalResistance
• HighPowerDensity
• Highmechanicalrobustness
• IsolatedBasePlate
• Compactdesign
• CopperBasePlate
• SolderContactTechnology
• RoHScompliant
• StandardHousing
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:NK
approvedby:RS
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
Digit
1-5
6-11
12-19
20-21
22-23
dateofpublication:2013-08-19
revision:2.0
ULapproved(E83335)
1
1 page  
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
TDB6HK180N16RR
Diode,Brems-Chopper/Diode,Brake-Chopper
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Tvj = 25°C
Dauergleichstrom
ContinuousDCforwardcurrent
PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
tP = 1 ms
Grenzlastintegral
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
CharakteristischeWerte/CharacteristicValues
Durchlassspannung
Forwardvoltage
IF = 50 A, VGE = 0 V
IF = 50 A, VGE = 0 V
IF = 50 A, VGE = 0 V
Rückstromspitze
Peakreverserecoverycurrent
IF = 50 A, - diF/dt = 3000 A/µs (Tvj=150°C)
VR = 600 V
Sperrverzögerungsladung
Recoveredcharge
IF = 50 A, - diF/dt = 3000 A/µs (Tvj=150°C)
VR = 600 V
AbschaltenergieproPuls
Reverserecoveryenergy
IF = 50 A, - diF/dt = 3000 A/µs (Tvj=150°C)
VR = 600 V
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proDiode/perdiode
Wärmewiderstand,GehäusebisKühlkörper proDiode/perdiode
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VorläufigeDaten
PreliminaryData
VRRM
IF
IFRM
I²t
1200
50
100
510
V
A
A
A²s
VF
IRM
Qr
Erec
RthJC
min. typ. max.
1,70 2,15
1,65
1,65
V
V
V
54,0
60,0
63,0
A
A
A
5,50 µC
8,80 µC
10,0 µC
1,70 mJ
3,00 mJ
3,70 mJ
0,81 K/W
RthCH
0,375
K/W
preparedby:NK
approvedby:RS
dateofpublication:2013-08-19
revision:2.0
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet TDB6HK180N16RR.PDF ] | |
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