DataSheet.es    


Datasheet KM702 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1KM702Sensor

Kraft Sensoren intelligent · konfigurierbar · programmierbar Serie KM702 / KT702   • Messbereiche￿von￿0...200N￿bis￿0...1000N • Zug-￿oder￿Druckkraftmessung • Wahlweise￿als￿Messzelle￿(KM702)￿oder￿mit￿eingebautem Verstärker￿(KT702) • Tarierfunktion￿standardmä�
MEGATRON
MEGATRON		sensor


KM7 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1KM702Sensor

Kraft Sensoren intelligent · konfigurierbar · programmierbar Serie KM702 / KT702   • Messbereiche￿von￿0...200N￿bis￿0...1000N • Zug-￿oder￿Druckkraftmessung • Wahlweise￿als￿Messzelle￿(KM702)￿oder￿mit￿eingebautem Verstärker￿(KT702) • Tarierfunktion￿standardmä�
MEGATRON
MEGATRON		sensor
2KM71014.9MHz Rail-to-Rail I/O Amplifier

www.fairchildsemi.com KM7101 Features I Ultra-Low Cost, 139µA, +2.7V, 4.9MHz Rail-to-Rail I/O Amplifier General Description The KM7101 is an ultra-low cost, low power, voltage feedback amplifier that is pin compatible to the LMC7101. If a standard pinout is required, use the KM4170. The KM7101 us
Fairchild Semiconductor
Fairchild Semiconductor		amplifier
3KM718FV4021(KM736FV4021 / KM718FV4021) 128Kx36 & 256Kx18 Synchronous Pipelined SRAM

KM736FV4021 KM718FV4021 Document Title 128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128Kx36 & 256Kx18 SRAM Revision History Rev. No. Rev. 0.0 Rev. 0.1 History - Preliminary specification release - Change specification format. No change was made in parameters. - Updated IDD, ISB and Input High Lev
Samsung semiconductor
Samsung semiconductor		ram
4KM718V089512Kx36 & 1Mx18 Synchronous SRAM

KM736V989 KM718V089 Document Title 512Kx36 & 1Mx18 Synchronous SRAM 512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History Initial draft 1. Update ICC & ISB values. 1. Change ISB value from 150mA to 110mA at -67. 2. Change ISB value from 130mA to 90mA a
Samsung semiconductor
Samsung semiconductor		ram
5KM718V847(KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM

KM736V747 KM718V847 Document Title 128Kx36 & 256Kx18 Flow-Through NtRAMTM 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed tCD from 8.0ns to 8.5ns at -8 2. Changed tCYC from 13ns to 12ns at -10 3. Changed DC condition at Icc and
Samsung Semiconductor
Samsung Semiconductor		data
6KM718V849(KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM

KM736V749 KM718V849 Document Title 128Kx36 & 256Kx18 Pipelined NtRAMTM 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75 2. Changed DC condition at Icc and parameters ISB1 ; from 10mA to 30mA, ISB2
Samsung Semiconductor
Samsung Semiconductor		data
7KM718V887256Kx18 Synchronous SRAM

KM718V887 Document Title 256Kx18-Bit Synchronous Burst SRAM 256Kx18 Synchronous SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Modify power down cycle timing & Interleaved read timing, Insert Note 4 at AC timing characteristics. Change ISB1 value from 10mA to 30mA. Change ISB2 value
Samsung semiconductor
Samsung semiconductor		ram



Esta página es del resultado de búsqueda del KM702. Si pulsa el resultado de búsqueda de KM702 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap