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PDF L7055-04 Data sheet ( Hoja de datos )
| Número de pieza | L7055-04 | |
| Descripción | HIGH-POWER INFRARED PULSED LASER DIODE | |
| Fabricantes | Hamamatsu Corporation | |
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FEATURES
High output power ( ep 0W)
High speed rise time (tr=0.5 ns typ.)
APPLICATIONS
Laser rader
Range finder
Excitation light source
Optical trigger
Security barrier
HIGH-POWER
INFRARED PULSED LASER DIODE
L7055-04
Figure 1: Dimensional Outline (Unit: mm)
Glass Window
LD Chip
9.0
+0
-0.1
5.7 0.2
2.8 0.3
ABSOLUTE MAXIMUM RATINGS
Parameter
Pulsed Foward Current
Symbol
IFP
Value
30
Reverse Voltage
VR 2
Pulsed Radiant Output Power
ep
40
Pulse Duration (FWHM)
tw 100
Duty Ratio
Operating Temperature
DR 0.075
Top -30 to +85
Storage Temperature
Tstg -40 to +125
Unit
A
V
W
ns
%
0.45
2.54
Side View
NC (Case)
1.0
(Pin Connection)
Anode
Cathode
Bottom View
Anode
Cathode
ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25 )
Parameter
Pulsed Radiant Power
Peak Emission Wavelength
Spectral Radiation Half Bandwidth
Forward Voltage
Rise Time
Beam Spread Angle : Parallel
: Vertical
Lasing Threshold Current
Symbol
ep
p
Condition
IFP=20A
VF IFP=20A
tr
FWHM
IFP=20A
Ith
Min.
20
-
-
-
-
6
29
-
Typ.
-
870
4
6
0.5
8
32
1
Note: General operating condition ep W, tw 0 ns, Repetition frequency kHz
Max.
-
-
-
-
-
10
35
-
Unit
W
nm
nm
V
ns
degree
degree
A
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. C 1998 Hamamatsu Photonics K.K.
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| PDF Descargar | [ Datasheet L7055-04.PDF ] | |
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