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PDF ME4856-G Data sheet ( Hoja de datos )
| Número de pieza | ME4856-G | |
| Descripción | N-Channel 30-V(D-S) MOSFET | |
| Fabricantes | Matsuki | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ME4856-G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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N-Channel 30-V(D-S) MOSFET
GENERAL DESCRIPTION
The ME4856 is the N-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
ME4856/ME4856-G
FEATURES
● RDS(ON)≦6mΩ@VGS=10V
● RDS(ON)≦8.5mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● Battery Powered System
● DC/DC Converter
● Load Switch
e Ordering Information: ME4856 (Pb-free)
ME4856-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25℃
TA=70℃
Pulsed Drain Current
Maximum Power Dissipation
TA=25℃
TA=70℃
Operating Junction and Storage Temperature Range
Thermal Resistance-Junction to Ambient*
* The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
Maximum Ratings
30
±20
16
12.9
65
2.5
1.6
-55 to 150
50
Unit
V
V
A
A
W
℃
℃/W
Aug, 2012-Ver4.2
01
1 page  
N-Channel 30-V(D-S) MOSFET
ME4856/ME4856-G
SOP-8 Package Outline
MILLIMETERS (mm)
DIM
MIN MAX
A 1.35 1.75
A1 0.10
0.25
B 0.35 0.49
C 0.18 0.25
D 4.80 5.00
E 3.80 4.00
e 1.27 BSC
H 5.80 6.20
L 0.40 1.25
θ 0°
7°
Note: 1. Refer to JEDEC MS-012AA.
2. Dimension “D” does not include mold flash, protrusions
or gate burrs . Mold flash, protrusions or gate burrs shall not
exceed 0.15 mm per side.
Aug, 2012-Ver4.2
05
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet ME4856-G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| ME4856-G | N-Channel 30-V(D-S) MOSFET | Matsuki |
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