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PDF 2N2222 Data sheet ( Hoja de datos )
| Número de pieza | 2N2222 | |
| Descripción | SILICON NPN TRANSISTORS | |
| Fabricantes | Central | |
| Logotipo |  |
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 1. 30V, 0.8A, NPN Transistor, TO-18  Hay una vista previa y un enlace de descarga de 2N2222 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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2N2221
2N2222
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2221 and
2N2222 are silicon NPN epitaxial planar transistors
designed for small signal, general purpose switching
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
ΘJA
ΘJC
60
30
5.0
800
500
1.2
-65 to +200
350
146
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=50V
-
ICBO
VCB=50V, TA=150°C
-
IEBO
VEB=3.0V
-
BVCBO
IC=10μA
60
BVCEO
IC=10mA
30
BVEBO
IE=10μA
5.0
VCE(SAT)
IC=150mA, IB=15mA
-
VCE(SAT)
IC=500mA, IB=50mA
-
VBE(SAT)
IC=150mA, IB=15mA
0.6
VBE(SAT)
IC=500mA, IB=50mA
-
fT
VCE=20V, IC=20mA, f=100MHz
250
Cob VCB=10V, IE=0, f=100kHz
-
Cib VEB=0.5V, IC=0, f=100kHz
-
MAX
10
10
10
-
-
-
0.4
1.6
1.3
2.6
-
8.0
30
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
UNITS
nA
μA
nA
V
V
V
V
V
V
V
MHz
pF
pF
R2 (24-July 2013)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N2222.PDF ] | |
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