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PDF K30A06J3A Data sheet ( Hoja de datos )

Número de pieza K30A06J3A
Descripción TK30A06J3A
Fabricantes Toshiba Semiconductor 
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No Preview Available ! K30A06J3A Hoja de datos, Descripción, Manual

TK30A06J3A
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (UMOS)
TK30A06J3A
Switching Regulator Applications
Unit: mm
z Low drain-source ON-resistance: RDS (ON) = 19 m(typ.)
z High forward transfer admittance: |Yfs| = 34 S (typ.)
z Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
z Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 kΩ)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
60
60
±20
30
90
25
40
30
2.5
150
55 to 150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (chc)
Rth (cha)
5.0 °C / W
62.5 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 60 μH, RG = 25 Ω, IAR = 30 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.Handle with care.
1
2
3
1 2009-09-29

1 page




K30A06J3A pdf
TK30A06J3A
rth – tw
10
1
Duty=0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 μ
0.01
100 μ
PDM
Single Pulse
t
T
Duty = t/T
Rth (ch-c) = 5.0°C/W
1m
10 m
100 m
1
Pulse width tw (S)
10
Safe operating area
100
ID max (Pulse) *
100 μs *
ID max (continuous)
10
1 ms *
DC operation
1 Tc = 25°C
0.1
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
0.01
0.1
1
VDSS max
10
Drain-source voltage VDS (V)
100
EAS – Tch
80
60
40
20
0
25 50
75 100 125 150 175
Channel temperature (initial) Tch (°C)
15 V
0V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 25 V, L = 60 μH
Wave form
ΕAS
=
1
2
L I2
⎜⎜⎝⎛
BVDSS
BVDSS VDD
⎟⎟⎠⎞
5 2009-09-29

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