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PDF B1320 Data sheet ( Hoja de datos )
| Número de pieza | B1320 | |
| Descripción | PNP Transistor - 2SB1320 | |
| Fabricantes | Panasonic Semiconductor | |
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1320
Silicon PNP epitaxial planar type
For low frequency power amplification
Complementary to 2SD1991
Features
Allowing supply with the radial taping
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
–30
–25
–7
–100
–200
400
150
–55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Package
Code
MT-1-A1
Pin Name
1. Emitter
2. Collector
3. Base
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ
Collector-base voltage (Emitter open)
VCBO IC = –10 mA, IE = 0
–30
Collector-emitter voltage (Base open)
VCEO IC = –2 mA, IB = 0
–25
Emitter-base voltage (Collector open)
VEBO IE = –10 mA, IC = 0
–7
Collector-base cutoff current (Emitter open) ICBO VCB = –20 V, IE = 0
Collector-emitter cutoff current (Base open) ICEO VCB = –20 V, IB = 0
Forward current transfer ratio *
hFE VCE = –10 V, IC = –2 mA
160
Collector-emitter saturation voltage
VCE(sat) IC = –100 mA, IB = –10 mA
Transition frequency
fT VCB = –10 V, IE = 1 mA, f = 200 MHz
80
Collector output capacitance
(Common base, input open circuited)
Cob VCB = –10 V, IE = 0, f = 1 MHz
3.5
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
QRS
hFE
160 to 260
210 to 340
290 to 460
Max
–1
–1
460
–1
Unit
V
V
V
mA
mA
V
MHz
pF
Publication date : October 2008
SJC00430AED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet B1320.PDF ] | |
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