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PDF GLT41316-70Q Data sheet ( Hoja de datos )

Número de pieza GLT41316-70Q
Descripción 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Fabricantes ETC 
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No Preview Available ! GLT41316-70Q Hoja de datos, Descripción, Manual

G-LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Features :
65,536 words by 16 bits organization.
Fast access time and cycle time.
Dual WE Input.
Low power dissipation.
Read-Modify-Write, RAS -Only Refresh,
CAS -Before- RAS Refresh, Hidden
Refresh and Test Mode Capability.
256 refresh cycles per 4ms.
Available in 40-pin 400 mil SOJ,and 40/44
pin TSOP (II).
Single 5.0V±10% Power Supply.
All inputs and Outputs are TTL
compatible. Fast Page Mode operation.
Description :
The GLT41316 is a 65,536 x 16 bit high-
performance CMOS dynamic random access
memory. The GLT41316 offers Fast Page
mode ,and has both BYTE WRITE and
WORD WRITE access cycles via two WE
pins. The GLT41316 has symmetric address
and accepts 256-cycle refresh in 4ms
interval.
All inputs are TTL compatible. Fast
Page Mode operation allows random access
up to 256x16 bits, within a page, with cycle
times as short as 18ns.
The GLT41316 is best suited for
graphics, and DSP applications requiring
high performance memories.
HIGH PERFORMANCE
Max. RAS Access Time, (tRAC)
Max. Column Address Access Time, (tAA)
Min. Fast Page Mode Cycle Time, (tPC)
Min. Read/Write Cycle Time, (tRC)
Max. CAS Access Time (tCAC)
30
30 ns
15 ns
18 ns
65 ns
10 ns
35
35 ns
18 ns
21 ns
70 ns
11 ns
40
40 ns
20 ns
23 ns
75 ns
12 ns
45
45 ns
22 ns
25 ns
80 ns
12 ns
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-1-
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.

1 page




GLT41316-70Q pdf
G-LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
DC and Operating Characteristics (1-2)
TA = 0°C to 70°C, VCC=5V±10%, VSS=0V, unless otherwise specified.
Sym.
Parameter
Test Conditions
Access Min. Typ Max. Unit Notes
Time
ILI Input Leakage Current
(any input pin)
0V VIN 5.5V
(All other pins not under
test=0V)
-10
ILO Output Leakage Current 0V Vout 5.5V
(for High-Z State)
Output is disabled (Hiz)
-10
ICC1 Operating Current,
Random READ/WRITE
ICC2 Standby Current,(TTL)
ICC3 Refresh Current,
RAS-Only
ICC4 Operating Current,
EDO Page Mode
tRC = tRC (min.)
RAS , CAS at VIH
other inputs VSS
RAS cycling, CAS at
VIH
tRC = tRC (min.)
RAS at VIL, CAS ,
address cycling: tPC =
tPC(min.)
tRAC = 30ns
tRAC = 35ns
tRAC = 40ns
tRAC = 45ns
tRAC = 30ns
tRAC = 35ns
tRAC = 40ns
tRAC = 45ns
tRAC = 30ns
tRAC = 35ns
tRAC = 40ns
tRAC = 45ns
ICC5 Refresh Current,
CAS Before RAS
RAS , CAS ,
address cycling:
tRC = tRC (min.)
ICC6 Standby Current, (CMOS) RAS VCC-0.2V,
tRAC = 30ns
tRAC = 35ns
tRAC = 40ns
tRAC = 45ns
VIL Input Low Voltage
VIH Input High Voltage
VOL Output Low Voltage
VOH Output High Voltage
CAS VCC-0.2V,
All other inputs VSS
IOL = 4.2mA
IOH = -5mA
-1
2.4
2.4
+10 µA
+10 µA
180
170 mA 1,2
160
150
4 mA
180
170 mA 2
160
150
180
170 mA 1,2
160
150
180 mA 1
170
160
150
2 mA
+0.8
VCC+1
0.4
V
V
V
V
3
3
Notes:
1. ICC is dependent on output loading when the device output is selected. Specified ICC(max.) is measured with the
output open.
2. ICC is dependent upon the number of address transitions specified ICC(max.) is measured with a maximum of
one transition per address cycle in random Read/Write and Fast Page Mode.
3. Specified VIL(min.) is steady state operation. During transitions VIL(min.) may undershoot to -1.0V for a period not
to exceed 20ns. All AC parameters are measured with VIL(min.)VSS and VIH(max.)VCC.
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-5-
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.

5 Page





GLT41316-70Q arduino
G-LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Late Write Cycle ( OE Controlled Write)
NOET : DOUT = OPEN
UW,LW
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
- 11 -
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.

11 Page







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