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Número de pieza | K2733 | |
Descripción | MOSFET ( Transistor ) - 2SK2733 | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de K2733 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! 2SK2733
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2733
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 8.0 Ω (typ.)
l High forward transfer admittance : |Yfs| = 0.9 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 720 V)
l Enhancement−mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
900
900
±30
1
3
60
324
1
6.0
150
−55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
2-10P1B
Weight: 2.0 g (typ.)
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
2.08
83.3
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 594 mH, RG = 25 Ω, IAR = 1 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-09-02
1 page 2SK2733
RG = 25 Ω
VDD = 90 V, L = 594 mH
EAS
=
1
2
×L
× I2
× çæ
è
BVDSS
BVDSS - VDD
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5 2002-09-02
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet K2733.PDF ] |
Número de pieza | Descripción | Fabricantes |
K2733 | MOSFET ( Transistor ) - 2SK2733 | Toshiba Semiconductor |
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