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PDF GL4800 Data sheet ( Hoja de datos )

Número de pieza GL4800
Descripción Thin Type Infrared Emitting Diode
Fabricantes Sharp Electrionic Components 
Logotipo Sharp Electrionic Components Logotipo



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No Preview Available ! GL4800 Hoja de datos, Descripción, Manual

GL4800
GL4800
Thin Type Infrared Emitting
Diode
s Features
1. Thin type ( Thickness : 1.5mm )
2. Beam angle ( ∆θ : TYP. ± 30˚)
3. Radiant flux
( Φ e : MIN. 0.7mW at I F = 20mA )
4. Epoxy resin package
s Applications
1. Floppy disk drives
2. Optoelectronic switches
s Outline Dimensions
(Unit : mm )
2 - C0.5
3.0 ± 0.2
1.6
φ 0.8
2 - 0.45
2 - 0.9
1.5 ± 0.2
0.8
Pink transparent
epoxy resin
0.7 1
2.54
2
1 Anode
0.25 2 Cathode
12
s Absolute Maximum Ratings
(Ta = 25˚C )
Parameter
Power dissipation
Forward current
*1Peak forward current
Reverse voltage
Operating temperature
Storage temperature
*2Soldering temperature
Symbol
P
IF
I FM
VR
T opr
T stg
T sol
Rating
75
50
1
6
- 25 to + 85
- 40 to + 85
260
*1 Pulse width<=100µ s, Duty ratio= 0.01
*2 For 3 seconds at the position of 1.8mm from the surface of resin edge.
Unit
mW
mA
A
V
˚C
˚C
˚C
s Electro-optical Characteristics
Parameter
Forward voltage
Peak forward voltage
Reverse current
Terminal capacitance
Frequency response
Radiant flux
Peak emission wavelength
Half intensity wavelength
Symbol
VF
V FM
IR
Ct
fc
Φe
λp
∆λ
Conditions
IF = 20mA
IFM = 0.5A
VR = 3V
VR = 0, f = 1MHz
-
IF = 20mA
IF = 5mA
IF = 5mA
MIN.
-
-
-
-
-
0.7
-
-
TYP.
1.2
3.0
-
70
300
1.6
950
45
( Ta = 25˚C)
MAX.
1.4
4.0
10
-
-
3.0
-
-
Unit
V
V
µA
pF
kHz
mW
nm
nm
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.

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