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PDF GDU91-20222 Data sheet ( Hoja de datos )
| Número de pieza | GDU91-20222 | |
| Descripción | Gate Drive Unit | |
| Fabricantes | Dynex Semiconductor | |
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GDU 91 20222
GDU 91-20222
Gate Drive Unit
Replaces March 1998 version, DS4570-3.1
DS4570-4.0 January 2000
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
APPLICATIONS
s Used with Gate Turn-Off Thyristors in high current switching
applications
KEY PARAMETERS
IFGM
I
G(ON)
dIGQ/dt
30A
4A
30A/µs
CONDITIONS - (UNLESS STATED OTHERWISE)
V = +5V
1
Test circuit GTO
GDU connection to GTO
Test circuit emitter and gate drive emitter
Test circuit emitter current
Test circuit receiver and gate drive receiver
V = +15V
2
DG408BP
V = -15V
3
500mm CO - AX cable type RC5327230
Honeywell sweetspot HFE 4020 - 013
30mA
Honeywell sweetspot HFD 3029 - 002
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IV1 +5V PSU current
IV2 +15V PSU current
IV3
V
1(Min)
V
2(Min)
V3(Min)
IFGM
IG(ON)
dIFG/dt
dIGQ/dt
-15V PSU current
+5V PSU minimum
+15V PSU minimum
-15V PSU minimum
Peak forward gate current
On-state gate current
Rate of rise of positive gate current
Rate of rise of negative gate current
Conditions
500Hz, 50% duty cycle
500Hz
500Hz, IT = 1000A
GTO Tj = 125˚C
-
-
-
-
-
Measured 10 - 75% IFGM
I = 1000A, 90% I - 50% I
T
G(ON)
GQM
Min. Typ. Max. Units
- - 2.2 A
- - 0.55 A
--
3.8 -
14.0 -
14.0 -
30 -
-4
- 30
- 30
3.0 A
-V
-V
-V
-A
-A
- A/µs
- A/µs
1/4
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| PDF Descargar | [ Datasheet GDU91-20222.PDF ] | |
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| GDU91-20221 | Gate Drive Unit | Dynex Semiconductor |
| GDU91-20222 | Gate Drive Unit | Dynex Semiconductor |
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