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Datasheet BF245C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BF245C | JFET VHF/UHF AMPLIFIER BF244,A,B,C
CASE 29-02, STYLE 22 TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Forward Gate Current
@Total Device Dissipation Ta = 25°C
Derate above 25°C Storage Channel Temperature Range
Symbol VDS vdg vgs
id 'G(f)
PD
Tstq
Val |  Motorola Semiconductors | amplifier |
| 2 | BF245C | N-Channel FET OEM: Texas Instruments
BF245
Data Sheet
www.semicon-data.com
OEM: Texas Instruments
BF245
Data Sheet
www.semicon-data.com
OEM: Texas Instruments
BF245
Data Sheet
www.semicon-data.com
OEM: Texas Instruments
BF245
Data Sheet
www.semicon-data.com
OEM: Texas Instruments
BF245
Data Shee |  Texas | data |
| 3 | BF245C | N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS
DATA SHEET
BF245A; BF245B; BF245C N-channel silicon field-effect transistors
Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30
Philips Semiconductors
Product specification
N-channel silicon field-effect transistor |  NXP Semiconductors | transistor |
| 4 | BF245C | N-Channel Amplifiers BF245A/BF245B/BF245C
BF245A/BF245B/BF245C
N-Channel Amplifiers
• This device is designed for VHF/UHF amplifiers. • Sourced from process 50.
1
TO-92
1. Gate 2. Source 3. Drain
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VDG VGS IGF PD TJ, TSTG Parameter Drain-Gate Voltage |  Fairchild Semiconductor | amplifier |
| 5 | BF245C | N-Channel junction field-Effect Transistors |  Siemens Semiconductor Group | transistor |
BF2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BF20-601A | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | BF200 | NPN TRANZYSTORY ETC data | | |
| 3 | BF2000 | Silicon N Channel MOSFET Tetrode BF 2000
Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz
3 4 2 1
VPS05178
Type BF 2000
Marking Ordering Code NDs Q62702-F1771
Pin Configuration 1=S 2=D 3 = G2 4 = G1
Package S Siemens Semiconductor Group mosfet | | |
| 4 | BF2000W | Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz) BF 2000W
Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz
3 4
2 1
VPS05605
Type
Marking Ordering Code Q62702-F1772
Pin Configuration 1=D 2=S 3 = G1 4 = G2
Package SOT-343
BF Siemens Semiconductor Group mosfet | | |
| 5 | BF200B | NPN High Frequency Transistors Bharat transistor | | |
| 6 | BF200B | IF / RF Amplifiers and Oscillators Advani amplifier | | |
| 7 | BF2030 | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V) BF 2030
Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V
3 4 2 1
VPS05178
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type BF 2030
Marking Ordering Code NEs Q62702-F1773
Pin Siemens Semiconductor Group mosfet | |
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