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PDF L6567 Data sheet ( Hoja de datos )

Número de pieza L6567
Descripción HIGH VOLTAGE DRIVER FOR CFL
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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L6567
HIGH VOLTAGE DRIVER FOR CFL
n BCD-OFF LINE TECHNOLOGY
n FLOATING SUPPLY VOLTAGE UP TO 570V
n GND REFERRED SUPPLY VOLTAGE UP TO
18V
n UNDER VOLTAGE LOCK OUT
n CLAMPING ON Vs
n DRIVER CURRENT CAPABILITY:
30mA SOURCE
70mA SINK
n PREHEAT AND FREQUENCY SHIFT TIMING
DESCRIPTION
The device is a monolithic high voltage integrated cir-
cuit designed to drive CFL and small TL lamps with a
minimum part count.
It provides all the necessary functions for proper pre-
heat, ignition and steady state operation of the lamp:
variable frequency oscillator;
BLOCK DIAGRAM
MULTIPOWER BCD TECHNOLOGY
SO14
DIP14
ORDERING NUMBERS:
L6567D
L6567
settable preheating and ignition time;
capacitive mode protection;
lamp power independent from mains voltage variation.
Besides the control functions, the IC provides the lev-
el shift and drive function for two external power MOS
FETs in a half-bridge topology.
VS 5
CF 12
CS Cf
CI 14
Ci
Vhv
Rhv
RHV
13
FEED FORWARD
Cp/Cav
CP
8
VS
PREHEATING
TIMING
LEVEL
SHIFTING
VCO +
FREQ. SHIFTING
VOLTAGE
REFERENCE
BIAS
CURRENT
GENERATOR
to
comp.
Ref
10
RREF
LOGIC
C
1 FS
HIGH
SIDE
DRIVER
2 G1
3 S1
LOW
SIDE
DRIVER
6 G2
7 PGND
11 SGND
9 RS
Vhv
T1
L
Chv
Lamp
T2
Rshunt
CL
Chv
D96IN441B
MAINS
January 2000
This is preliminary information on a new product now in development. Details are subject to change without notice.
1/15

1 page




L6567 pdf
L6567
ELECTRICAL CHARACTERISTCS (Continued)
Symbol
Parameter
Test Conditio n
G2DON
On Delay of G2 Output
G-----1----D---O----N-----+-----G-----1---O-----N---
G2DON + G2ON
Ratio between Delay Time +
Conduction Time of G1 and G2
IRHV = 1mA; Cl = 5V
Cl = 0V
LOW SIDE DRIVER SECTION
Ron G2 so G2 Source Output Resistance VS = 12V, V = 3V
Ron G2 si G2 Sink Output Resistance
VS = 12V, V = 3V
Ron G1 so G1 Source Output Resistance VS = 10V, V = 3V
Ron G1 si G1 Sink Output Resistance
VS = 10V, V = 3V
HIGH SIDE DRIVER SECTION
IFSLK
Leakage Current of FS PIN to VFS = 568V; G1 = L
GND
VFS = 568V; G1 = H
IS1 LK
Leakage Current of S1 PIN to VS1 = 568V; G1 = L
GND
VS1 = 568V; G1 = H
BOOTSTRAP SECTION
Boot Th BOOTSTRAP Threshold
VS = 10.6V before turn on
AVERAGE RESISTOR
RAVERAGE Average Resistor
(*) Before starting the first commutation; when switching 6V is guaranteed.
Min.
1.05
0.87
0.77
Typ.
1.4
Max.
1.75
1.15
1.30
Unit
µs
80 190
65 125
80 190
65 125
5 µA
5 µA
5 µA
5 µA
5 (*) V
27 38.5 50
k
General operation
The L6567 uses a small amount of current from a supply resistor(s) to start the operation of the IC. Once start
up condition is achieved, the IC turns on the lower MOS transistor of the half bridge which allows the bootstrap
capacitor to charge. Once this is achieved, the oscillator begins to turn on the upper and lower MOS transistors
at high frequency, and immediately ramps down to a preheat frequency. During this stage, the IC preheats the
lamp and after a predetermined time ramps down again until it reaches the final operating frequency. The IC
monitors the current to determine if the circuit is operating in capacitive mode. If capacitive switching is detected,
the IC increases the output frequency until zero-voltage switching is resumed.
Startup and supply in normal operation
At start up the L6567 is powered via a resistor connected to the RHV pin (pin 13) from the rectified mains. The
current charges the CS capacitor connected to the VS pin (pin 5). When the VS voltage reaches the threshold
VS LOW1 (max 6V), the low side MOS transistor is turned on while the high side one is kept off. This condition
assures that the bootstrap capacitor is charged. When VS HIGH1 threshold is reached the oscillator starts, and
the RHV pin does not provide anymore the supply current for the IC (see fig.1).
5/15

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L6567 arduino
L6567
Figure 5. Working frequency vs IRHV
@ RREF = 30Kohm
1 6 0 .0 0
15 0 .0 0
14 0 .0 0
13 0 .0 0
1 2 0 .0 0
11 0 .0 0
10 0 .0 0
9 0 .0 0
8 0 .0 0
7 0 .0 0
6 0 .0 0
5 0 .0 0
4 0 .0 0
3 0 .0 0
2 0 .0 0
1 0 .0 0
0 .0 0
0.2 0
R re f= 30Ko hm
0.4 0
0 .6 0
0 .8 0
Irh v [m A ]
1 .00
C f= 47pF
Cf= 56p F
Cf= 6 8p F
C f= 82pF
Cf= 100 pF
Cf= 120 pF
Cf=15 0pF
Cf=1 80 pF
Cf=22 0pF
1 .20
Figure 6. Frequency vs CF @ RREF=30Kohm
1 60 .0 0
150.00
140.00
130.00
R ref=30Kohm
1 20 .0 0
110.00
100.00
90.00
80 .0 0
70.00
60.00
50.00
40 .0 0
I=1m A
30.00
I=0 .7 5 m A )
20.00
10.00
I=0.5m A
0 .0 0
40 .0 0
60 .0 0
80 .0 0 1 00 .0 0 1 2 0.00 14 0 .0 0 16 0.0 0 1 80 .0 0 20 0.0 0 2 20 .0 0 2 4 0.00
Cf [pF]
Figure 7. TDT vs RREF @ CF = 100pF
2.40
T d t [ca lcu late d da ta]
2.00
Td t [m e asu re d d a ta]
1.60
1.20
0.80
20 .00
30 .00
4 0.0 0
Rref [Kohm ]
50.00
6 0.0 0
Figure 8. Frequency vs IRHV @ CF = 82pF
120.00
100.00
80.00
60.00
40.00
R ref= 20 K
R ref= 22 K
R re f=24K
R re f=2 7K
R re f= 30 K
R re f=33K
Rr ef= 36 K
R re f= 39 K , 4 3 K, 4 7K , 5 1K
0.20
0.40
0 .60
0.80
Irh v [m A ]
1.00
Figure 9. Frequency vs IRHV @ CF=100pF
10 0.0 0
1.20
8 0.0 0
6 0.0 0
4 0.0 0
R re f= 2 0 K
R r ef =2 2 K
Rr ef= 2 4 K
R ref=2 7K
R ref= 30K
R ref= 33K
R ref=3 6K
R re f =3 9K ,4 3 K
2 0.0 0
0 .2 0
0 .4 0
0 .6 0
0 .8 0
Irhv [m A ]
1 .0 0
1 .2 0
Figure 10. Frequency vs IRHV @ CF=120pF
80 .0 0
60 .0 0
R r ef= 20K
R ref=22 K
40 .0 0
R r ef=24 K
R ref=27 K
R re f=3 0 K
R r ef=33 K
R ref=36K
R ref=39 K
R r e f= 43 K , 4 7 K , 5 1 K
20 .0 0
0 .20
0 .40
0.60
0.80
Irhv [m A ]
1.00
1.20
11/15

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