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PDF L6386D Data sheet ( Hoja de datos )
| Número de pieza | L6386D | |
| Descripción | HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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® L6386
HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER
HIGH VOLTAGE RAIL UP TO 600V
dV/dt IMMUNITY +- 50 V/nsec iN FULL TEM-
PERATURE RANGE
DRIVER CURRENT CAPABILITY:
400 mA SOURCE,
650 mA SINK
SWITCHING TIMES 50/30 nsec RISE/FALL
WITH 1nF LOAD
CMOS/TTL SCHMITT TRIGGER INPUTS
WITH HYSTERESIS AND PULL DOWN
UNDER VOLTAGE LOCK OUT ON LOWER
AND UPPER DRIVING SECTION
INTEGRATED BOOTSTRAP DIODE
OUTPUTS IN PHASE WITH INPUTS
DESCRIPTION
The L6386 is an high-voltage device, manufac-
tured with the BCD ”OFF-LINE” technology. It has
a Driver structure that enables to drive inde-
BLOCK DIAGRAM
SO14
DIP14
ORDERING NUMBERS:
L6386D
L6386
pendent referenced Channel Power MOS or
IGBT. The Upper (Floating) Section is enabled to
work with voltage Rail up to 600V. The Logic In-
puts are CMOS/TTL compatible for ease of inter-
facing with controlling devices.
BOOTSTRAP DRIVER
VCC
UV
4 DETECTION
3
HIN
2
SD
UV
DETECTION
LOGIC
LEVEL
SHIFTER
1
LIN
SGND
7
VREF
14
HVG
R DRIVER
R
13
S
VCC 12
LVG
DRIVER
-
+
9
8
5
Vboot
H.V.
HVG
CBOOT
OUT
LVG
TO LOAD
PGND
DIAG
6 CIN
July 1999
D97IN520D
1/10
1 page  
L6386
BOOTSTRAP DRIVER
A bootstrap circuitry is needed to supply the high
voltage section. This function is normally accom-
plished by a high voltage fast recovery diode (fig.
4a). In the L6386 a patented integrated structure
replaces the external diode. It is realized by a
high voltage DMOS, driven synchronously with
the low side driver (LVG), with in series a diode,
as shown in fig. 4b
An internal charge pump (fig. 4b) provides the
DMOS driving voltage .
The diode connected in series to the DMOS has
been added to avoid undesirable turn on of it.
CBOOT selection and charging:
To choose the proper CBOOT value the external
MOS can be seen as an equivalent capacitor.
This capacitor CEXT is related to the MOS total
gate charge :
CEXT
=
Qgate
Vgate
The ratio between the capacitors CEXT and CBOOT
is proportional to the cyclical voltage loss .
It has to be:
CBOOT>>>CEXT
e.g.: if Qgate is 30nC and Vgate is 10V, CEXT is
3nF. With CBOOT = 100nF the drop would be
300mV.
If HVG has to be supplied for a long time, the
CBOOT selection has to take into account also the
leakage losses.
e.g.: HVG steady state consumption is lower than
200µA, so if HVG TON is 5ms, CBOOT has to
supply 1µC to CEXT. This charge on a 1µF ca-
pacitor means a voltage drop of 1V.
The internal bootstrap driver gives great advan-
tages: the external fast recovery diode can be
avoided (it usually has great leakage current).
This structure can work only if VOUT is close to
GND (or lower) and in the meanwhile the LVG is
on. The charging time (Tcharge ) of the CBOOT is
the time in which both conditions are fulfilled and
it has to be long enough to charge the capacitor.
The bootstrap driver introduces a voltage drop
due to the DMOS RDSON (typical value: 125
Ohm). At low frequency this drop can be ne-
glected. Anyway increasing the frequency it
must be taken in to account.
The following equation is useful to compute the
drop on the bootstrap DMOS:
Vdrop = IchargeRdson → Vdrop = TQchgaartgeeRdson
where Qgate is the gate charge of the external
power MOS, Rdson is the on resistance of the
bootstrap DMOS, and Tcharge is the charging time
of the bootstrap capacitor.
For example: using a power MOS with a total
gate charge of 30nC the drop on the bootstrap
DMOS is about 1V, if the Tcharge is 5µs. In fact:
Vdrop
=
30nC
5µs
⋅
125Ω
~
0.8V
Vdrop has to be taken into account when the volt-
age drop on CBOOT is calculated: if this drop is
too high, or the circuit topology doesn’t allow a
sufficient charging time, an external diode can be
used.
Figure 4. Bootstrap Driver.
DBOOT
VS
HVG
LVG
a
VBOOT
H.V.
VOUT
VS
CBOOT
TO LOAD
HVG
LVG
b
VBOOT
H.V.
VOUT
CBOOT
TO LOAD
D99IN1056
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet L6386D.PDF ] | |
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