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PDF L6385D Data sheet ( Hoja de datos )

Número de pieza L6385D
Descripción HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! L6385D Hoja de datos, Descripción, Manual

® L6385
HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER
HIGH VOLTAGE RAIL UP TO 600 V
dV/dt IMMUNITY +- 50 V/nsec IN FULL TEM-
PERATURE RANGE
DRIVER CURRENT CAPABILITY:
400 mA SOURCE,
650 mA SINK
SWITCHING TIMES 50/30 nsec RISE/FALL
WITH 1nF LOAD
CMOS/TTL SCHMITT TRIGGER INPUTS
WITH HYSTERESIS AND PULL DOWN
UNDER VOLTAGE LOCK OUT ON LOWER
AND UPPER DRIVING SECTION
INTERNAL BOOTSTRAP DIODE
OUTPUTS IN PHASE WITH INPUTS
DESCRIPTION
The L6385 is an high-voltage device, manufac-
tured with the BCD”OFF-LINE” technology. It has
a Driver structure that enables to drive inde-
BLOCK DIAGRAM
SO8
Minidip
ORDERING NUMBERS:
L6385D
L6385
pendent referenced N Channel Power MOS or
IGBT. The Upper (Floating) Section is enabled to
work with voltage Rail up to 600V. The Logic In-
puts are CMOS/TTL compatible for ease of inter-
facing with controlling devices.
BOOTSTRAP DRIVER
VCC 3
UV
DETECTION
2
HIN
1
LIN
UV
DETECTION
LOGIC
LEVEL
SHIFTER
8 Vboot
H.V.
HVG
R
DRIVER
HVG
R
7
S
OUT
VCC
6
5 LVG
LVG
DRIVER
4 GND
Cboot
TO LOAD
D97IN514B
June 1999
1/9

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L6385D pdf
L6385
leakage losses.
e.g.: HVG steady state consumption is lower than
200µA, so if HVG TON is 5ms, CBOOT has to
supply 1µC to CEXT. This charge on a 1µF ca-
pacitor means a voltage drop of 1V.
The internal bootstrap driver gives great advan-
tages: the external fast recovery diode can be
avoided (it usually has great leakage current).
This structure can work only if VOUT is close to
GND (or lower) and in the meanwhile the LVG is
on. The charging time (Tcharge ) of the CBOOT is
the time in which both conditions are fulfilled and
it has to be long enough to charge the capacitor.
The bootstrap driver introduces a voltage drop
due to the DMOS RDSON (typical value: 125
Ohm). At low frequency this drop can be ne-
glected. Anyway increasing the frequency it
must be taken in to account.
The following equation is useful to compute the
Figure 4. Bootstrap Driver.
drop on the bootstrap DMOS:
Vdrop = IchargeRdson Vdrop = TQchgaartgeeRdson
where Qgate is the gate charge of the external
power MOS, Rdson is the on resistance of the
bootstrap DMOS, and Tcharge is the charging time
of the bootstrap capacitor.
For example: using a power MOS with a total
gate charge of 30nC the drop on the bootstrap
DMOS is about 1V, if the Tcharge is 5µs. In fact:
Vdrop
=
30nC
5µs
125
~
0.8V
Vdrop has to be taken into account when the volt-
age drop on CBOOT is calculated: if this drop is
too high, or the circuit topology doesn’t allow a
sufficient charging time, an external diode can be
used.
DBOOT
VS
HVG
LVG
VBOOT
H.V.
VOUT
VS
CBOOT
TO LOAD
HVG
LVG
VBOOT
H.V.
VOUT
CBOOT
TO LOAD
a b D99IN1056
Figure 5. Turn On Time vs. Temperature
250
@ Vcc = 15V
200
150
Typ.
100
50
0
-45 -25 0
25 50 75 100 125
Tj (°C)
Figure 6. Turn Off Time vs. Temperature
250
@ Vcc = 15V
200
150
Typ.
100
50
0
-45 -25 0
25 50 75 100 125
Tj (°C)
5/9

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