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PDF L6384D Data sheet ( Hoja de datos )
| Número de pieza | L6384D | |
| Descripción | HIGH-VOLTAGE HALF BRIDGE DRIVER | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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® L6384
HIGH-VOLTAGE HALF BRIDGE DRIVER
HIGH VOLTAGE RAIL UP TO 600 V
dV/dt IMMUNITY +- 50 V/nsec IN FULL TEM-
PERATURE RANGE
DRIVER CURRENT CAPABILITY:
400 mA SOURCE,
650 mA SINK
SWITCHING TIMES 50/30 nsec RISE/FALL
WITH 1nF LOAD
CMOS/TTL SCHMITT TRIGGER INPUTS
WITH HYSTERESIS AND PULL DOWN
SHUT DOWN INPUT
DEAD TIME SETTING
UNDER VOLTAGE LOCK OUT
INTEGRATED BOOTSTRAP DIODE
CLAMPING ON Vcc
SO8/MINIDIP PACKAGES
DESCRIPTION
The L6384 is an high-voltage device, manufac-
tured with the BCD”OFF-LINE” technology. It has
BLOCK DIAGRAM
SO8
Minidip
ORDERING NUMBERS:
L6384D
L6384
an Half - Bridge Driver structure that enables to
drive N Channel Power MOS or IGBT. The Upper
(Floating) Section is enabled to work with voltage
Rail up to 600V. The Logic Inputs are CMOS/TTL
compatible for ease of interfacing with controlling
devices. Matched delays between Lower and Up-
per Section simplify high frequency operation.
Dead time setting can be readily accomplished by
means of an external resistor.
VCC
2
BOOTSTRAP DRIVER
UV
DETECTION
1
IN
VCC
Idt
DT/SD
3
Vthi
DEAD
TIME
LOGIC
8 VBOOT
H.V.
RS
LEVEL
SHIFTER
HVG
DRIVER
7
VCC
6
HVG
OUT
5 LVG
LVG
DRIVER
4 GND
CBOOT
LOAD
D97IN518A
May 2000
1/10
1 page  
L6384
Figure 2. Typical Rise and Fall Times vs.
Load Capacitance
time
(nsec)
D99IN1015
250
200
Tr
150
Tf
100
50
0
0 1 2 3 4 5 C (nF)
For both high and low side buffers @25°C Tamb
BOOTSTRAP DRIVER
A bootstrap circuitry is needed to supply the high
voltage section. This function is normally accom-
plished by a high voltage fast recovery diode (fig.
4a). In the L6384 a patented integrated structure
replaces the external diode. It is realized by a
high voltage DMOS, driven synchronously with
the low side driver (LVG), with in series a diode,
as shown in fig. 4b
An internal charge pump (fig. 4b) provides the
DMOS driving voltage .
The diode connected in series to the DMOS has
been added to avoid undesirable turn on of it.
CBOOT selection and charging:
To choose the proper CBOOT value the external
MOS can be seen as an equivalent capacitor.
This capacitor CEXT is related to the MOS total
gate charge :
CEXT
=
Qgate
Vgate
The ratio between the capacitors CEXT and CBOOT
is proportional to the cyclical voltage loss .
It has to be:
CBOOT>>>CEXT
e.g.: if Qgate is 30nC and Vgate is 10V, CEXT is
3nF. With CBOOT = 100nF the drop would be
300mV.
If HVG has to be supplied for a long time, the
CBOOT selection has to take into account also the
leakage losses.
e.g.: HVG steady state consumption is lower than
200µA, so if HVG TON is 5ms, CBOOT has to
supply 1µC to CEXT. This charge on a 1µF ca-
Figure 3. Quiescent Current vs. Supply
Voltage
Iq
(µA)
104
D99IN1016
103
102
10
0 2 4 6 8 10 12 14 VS(V)
pacitor means a voltage drop of 1V.
The internal bootstrap driver gives great advan-
tages: the external fast recovery diode can be
avoided (it usually has great leakage current).
This structure can work only if VOUT is close to
GND (or lower) and in the meanwhile the LVG is
on. The charging time (Tcharge ) of the CBOOT is
the time in which both conditions are fulfilled and
it has to be long enough to charge the capacitor.
The bootstrap driver introduces a voltage drop
due to the DMOS RDSON (typical value: 125
Ohm). At low frequency this drop can be ne-
glected. Anyway increasing the frequency it
must be taken in to account.
The following equation is useful to compute the
drop on the bootstrap DMOS:
Vdrop = IchargeRdson → Vdrop = TQchgaartgeeRdson
where Qgate is the gate charge of the external
power MOS, Rdson is the on resistance of the
bootstrap DMOS, and Tcharge is the charging time
of the bootstrap capacitor.
For example: using a power MOS with a total
gate charge of 30nC the drop on the bootstrap
DMOS is about 1V, if the Tcharge is 5µs. In fact:
Vdrop
=
30nC
5µs
⋅
125Ω
~
0.8V
Vdrop has to be taken into account when the voltage
drop on CBOOT is calculated: if this drop is too high,
or the circuit topology doesn’t allow a sufficient
charging time, an external diode can be used.
5/10
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet L6384D.PDF ] | |
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