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PDF L6235 Data sheet ( Hoja de datos )
| Número de pieza | L6235 | |
| Descripción | DMOS driver | |
| Fabricantes | STMicroelectronics | |
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L6235
DMOS driver for 3-phase brushless DC motor
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Datasheet - production data
Features
Operating supply voltage from 8 to 52 V
5.6 A output peak current (2.8 A DC)
RDS(ON) 0.3 typ. value at Tj = 25 °C
Operating frequency up to 100 KHz
Non-dissipative overcurrent detection and
protection
Diagnostic output
Constant tOFF PWM current controller
Slow decay synchr. rectification
60° and 120° hall effect decoding logic
Brake function
Tachometer output for speed loop
Cross conduction protection
Thermal shutdown
Undervoltage lockout
Integrated fast freewheeling diodes
Description
The L6235 device is a DMOS fully integrated
3-phase motor driver with overcurrent protection.
Realized in BCD technology, the device combines
isolated DMOS power transistors with CMOS and
bipolar circuits on the same chip.
The device includes all the circuitry needed to
drive a 3-phase BLDC motor including: a 3-phase
DMOS bridge, a constant off time PWM current
controller and the decoding logic for single ended
hall sensors that generates the required
sequence for the power stage.
Available in PowerDIP24 (20 + 2 + 2),
PowerSO36 and SO24 (20 + 2 + 2) packages, the
L6235 device features a non-dissipative
overcurrent protection on the high-side power
MOSFETs and thermal shutdown.
October 2014
This is information on a product in full production.
DocID7618 Rev 3
1/35
www.st.com
1 page  
L6235
Maximum ratings
Table 3. Thermal data
Symbol
Description
PDIP24 SO24 PowerSO36 Unit
Rth(j-pins) Maximum thermal resistance junction pins
18 14
C/W
Rth(j-case)
Rth(j-amb)1
Rth(j-amb)1
Rth(j-amb)1
Rth(j-amb)2
Maximum thermal resistance junction case
Maximum thermal resistance junction ambient(1)
Maximum thermal resistance junction ambient(2)
Maximum thermal resistance junction ambient(3)
Maximum thermal resistance junction ambient(4)
43 51
--
--
58 77
1 C/W
- C/W
35 C/W
15 C/W
62 C/W
1. Mounted on a multilayer FR4 PCB with a dissipating copper surface on the bottom side of 6 cm2 (with a thickness of
35 µm).
2. Mounted on a multilayer FR4 PCB with a dissipating copper surface on the top side of 6 cm2 (with a thickness of 35 µm).
3. Mounted on a multilayer FR4 PCB with a dissipating copper surface on the top side of 6 cm2 (with a thickness of 35 µm),
16 via holes and a ground layer.
4. Mounted on a multilayer FR4 PCB without any heatsinking surface on the board.
DocID7618 Rev 3
5/35
35
5 Page 
L6235
5 Circuit description
Circuit description
5.1 Power stages and charge pump
The L6235 device integrates a 3-phase bridge, which consists of 6 power MOSFETs
connected as shown in Figure 1: Block diagram on page 3. Each power MOS has an
RDS(ON) = 0.3 (typical value at 25 °C) with intrinsic fast freewheeling diode. Switching
patterns are generated by the PWM current controller and the hall effect sensor decoding
logic (see Section 6: PWM current control on page 13 and Section 8: Decoding logic on
page 18). Cross conduction protection is implemented by using a deadtime (tDT = 1 µs
typical value) set by internal timing circuit between the turn off and turn on of two power
MOSFETs in one leg of a bridge.
Pins VSA and VSB MUST be connected together to the supply voltage (VS).
Using N-channel power MOS for the upper transistors in the bridge requires a gate drive
voltage above the power supply voltage. The bootstrapped supply (VBOOT) is obtained
through an internal oscillator and few external components to realize a charge pump circuit
as shown in Figure 5. The oscillator output (pin VCP) is a square wave at 600 KHz
(typically) with 10 V amplitude. Recommended values/part numbers for the charge pump
circuit are shown in Table 6.
Table 6. Charge pump external component values
Component
Value
CBOOT
CP
RP
D1
D2
22 0nF
10 nF
100
1N4148
1N4148
Figure 5. Charge pump circuit
D1
D2
CBOOT
VS
RP
CP
VCP
VBOOT
VSA VSB
D01IN1328
DocID7618 Rev 3
11/35
35
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet L6235.PDF ] | |
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