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PDF GP2400ESM18 Data sheet ( Hoja de datos )

Número de pieza GP2400ESM18
Descripción Hi-Reliability Single Switch IGBT Module
Fabricantes Dynex Semiconductor 
Logotipo Dynex Semiconductor Logotipo



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GP2400ESM18
FEATURES
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
s 2400A Per Module
GP2400ESM18
Hi-Reliability Single Switch IGBT Module
DS5406-1.1 January 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
I
C(PK)
(typ)
(max)
(max)
1800V
3.5V
2400A
4800A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
The powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP2400ESM18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP2400ESM18
Note: When ordering, please use the whole part number.
Aux C
External connection
C1 C2
C3
G
Aux E
E1 E2
External connection
E3
Fig. 1 Single switch circuit diagram
Outline type code: E
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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GP2400ESM18 pdf
GP2400ESM18
TYPICAL CHARACTERISTICS
4800
4200
Common emitter
Tcase = 25˚C
Vge = 20/15/12V
3600
3000
Vge = 10V
2400
1800
1200
600
0
0
1.0 2.0 3.0 4.0 5.0 6.0
Collector-emitter voltage, Vce - (V)
7.0
Fig. 3 Typical output characteristics
4800
4200
Common emitter
Tcase = 125˚C
3600
3000
2400
Vge = 20/15/12V
Vge = 10V
1800
1200
600
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
1.4
Tcase = 125˚C
VGE = 15V
1.2 VCE = 900V
RG = 2.2
L = 50nH
1.0
0.8
0.6
0.4
EOFF
EON
EREC
0.2
0
0 400 800 1200 1600 2000 2400
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
4.0
Tcase = 125˚C
3.5
VGE = 15V
VCE = 900V
IC = 2400A
L = 50nH
3.0
EOFF
2.5
EON
2.0
1.5
1.0
0.5
EREC
0
0 1 2 3 4 5 6 7 8 9 10
Gate resistance, RG - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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