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PDF GP1601FSS18 Data sheet ( Hoja de datos )
| Número de pieza | GP1601FSS18 | |
| Descripción | Single Switch Low VCE(SAT) IGBT Module | |
| Fabricantes | Dynex Semiconductor | |
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GP1601FSS18
GP1601FSS18
Single Switch Low VCE(SAT) IGBT Module
Replaces January 2000 version, DS5248-3.0
DS5248-4.2 January 2001
FEATURES
s Low VCE(SAT)
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
s 1600A Per module
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1800V
2.6V
1600A
3200A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP1601FSS18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low VCE(SAT) to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP1601FSS18
Note: When ordering, please use the whole part number.
Aux C
External connection
C1 C2
G
Aux E
E1 E2
External connection
Fig. 1 Single switch circuit diagram
Aux C
E1
Aux E
C1
G
E2 C2
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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1 page  
GP1601FSS18
TYPICAL CHARACTERISTICS
3200
2800
Common emitter
Tcase = 25˚C
Vge = 20/15/12/10V
2400
2000
1600
1200
800
400
0
0 1.0 2.0 3.0 4.0 5.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
3200
2800
Common emitter
Tcase = 125˚C
Vge = 20/15/12/10V
2400
2000
1600
1200
800
400
0
0 1.0 2.0 3.0 4.0 5.0 6.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
1200
1000
Tcase = 125˚C
VGE = ±15V
VCE = 900V
Rg = 2.2Ω
800
600
EOFF
EON
400 EREC
200
0
0 200 400 600 800 1000 1200 1400 1600
Collector current, IC - (A)
Fig. 5 Typical turn-on energy vs collector current
2000
1800
1600
Tcase = 125˚C
VGE = ±15V
VCE = 900V
IT = 1600A
EON
1400
1200
EOFF
1000
800
600
400
EREC
200
0
0 1 2 3 4 5 6 7 8 9 10
Gate resistance, RG - (Ohms)
Fig. 6 Typical turn-off energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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