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PDF GP1200FSS18 Datasheet ( Hoja de datos )

Número de pieza GP1200FSS18
Descripción Single Switch IGBT Module
Fabricantes Dynex Semiconductor 
Logotipo Dynex Semiconductor Logotipo

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GP1200FSS18 Hoja de datos, Descripción, Manual
GP1200FSS18
Replaces February 2000 version, DS5260-2.0
FEATURES
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
s 1200A Per Module
GP1200FSS18
Single Switch IGBT Module
DS5260-3.1 January 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
I
C(PK)
(typ)
(max)
(max)
1800V
3.5V
1200A
2400A
APPLICATIONS
s High Power Inverters
s Motor Controllers
s Induction Heating
s Resonant Converters
The powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP1200FSS18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP1200FSS18
Note: When ordering, please use the whole part number.
Aux C
External connection
C1 C2
G
Aux E
E1 E2
External connection
Fig. 1 Single switch circuit diagram
Aux C
E1
Aux E
C1
G
E2 C2
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP1200FSS18 pdf
GP1200FSS18
TYPICAL CHARACTERISTICS
2400
Common emitter
2200 Tcase = 25˚C
2000
Vge = 20/15/12V
1800
1600
1400
Vge = 10V
1200
1000
800
600
400
200
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
2400
Common emitter
2200 Tcase = 125˚C
2000
Vge = 20/15/12V
1800
1600
Vge = 10V
1400
1200
1000
800
600
400
200
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
1.0
Tcase = 125˚C
0.9 VGE = 15V
VCE = 900V
0.8
RG = 2.2Ω
L = 50nH
0.7
0.6
0.5 EOFF
0.4
0.3
0.2
0.1
0
0 200 400 600 800
Collector current, IC - (A)
EON
EREC
1000 1200
Fig. 5 Typical switching energy vs collector current
2.00
1.75
1.50
Tcase = 125˚C
VGE = 15V
VCE = 900V
IC = 1200A
L = 50nH
EON
1.25
1.00
EOFF
0.75
0.50
0.25
EREC
0
0 1 2 3 4 5 6 7 8 9 10
Gate resistance, RG - (Ohms)
Fig. 6 Typicalswitching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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