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PDF GP1200ESM33 Data sheet ( Hoja de datos )
| Número de pieza | GP1200ESM33 | |
| Descripción | High Reliability Single Switch IGBT Module Advance Information | |
| Fabricantes | Dynex Semiconductor | |
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GP1200ESM33
Replaces July 2000 version, DS5308-1.6
FEATURES
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
GP1200ESM33
High Reliability Single Switch IGBT Module
Advance Information
DS5308-2.1 February 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
3300V
3.4V
1200A
2400A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
Aux C
External connection
C1 C2
C3
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP1200ESM33 is a single switch 3300V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
G
Aux E
E1 E2
External connection
E3
Fig. 1 Single switch circuit diagram
ORDERING INFORMATION
Order As:
GP1200ESM33
Note: When ordering, please use the whole part number.
Outline type code: E
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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1 page  
GP1200ESM33
TYPICAL CHARACTERISTICS
2400
Common emitter
2200 Tcase = 25˚C
2000
Vge = 20/15/12/10V
1800
1600
1400
1200
1000
800
600
400
200
0
0 1.0 2.0 3.0 4.0 5.0 6.0
Collector-emitter voltage, Vce - (V)
Fig.3 Typical output characteristics
2400
Common emitter
2200 Tcase = 125˚C
2000
Vge = 20/15/12/10V
1800
1600
1400
1200
1000
800
600
400
200
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, Vce - (V)
Fig.4 Typical output characteristics
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
1.0
Tj = 25˚C
Tj = 125˚C
1.5 2.0 2.5 3.0
Foward voltage, VF - (V)
3.5
Fig.5 Diode typical forward characteristics
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600 Tcase = 125˚C
Vge = ±15V
400 Rg(OFF) = 3.3Ω
200
CGE = 660nF
dVCE/dt < 9000V/µs
0
0 500 1000 1500
2000
2500
3000
Collector-emitter voltage, Vce - (V)
3500
Fig.6 Reverse bias safe operating area
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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| PDF Descargar | [ Datasheet GP1200ESM33.PDF ] | |
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