(PDF) GN1010 Datasheet - GaAs N-Channel MES IC

Número de pieza	GN1010
Descripción	GaAs N-Channel MES IC
Fabricantes	Panasonic Semiconductor
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No Preview Available ! GaAs MMICs GN1010 GaAs N-Channel MES IC For high-output high-gain amplification s Features q General-use wide-band amplifier q Low noise q With bandwidth control pin GN1010 0.65±0.15 +0.2 2.8 –0.3 +0.2 1.5 –0.3 Unit : mm 0.65±0.15 0.5R 41 32 s Absolute Maximum Ratings (Ta = 25˚C) Parameter Power supply voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGS ID IG PD Tch Tstg Rating 6 –4 45 3 200 150 – 55 to +150 Unit V V mA mA mW ˚C ˚C 0.4±0.2 1 : Source 2 : Drain 3:C 4 : Gate Mini Type Package (4-pin) s Equivalent Circuit 2 3 4 s Electrical Characteristics (Ta = 25˚C) Parameter Drain current Noise figure Power gain IdB compression output Symbol IDD * 1 NF * 2 PG * 2 PO * 2 Condition VDS= 3V VDS= 3V, f= 0.5GHz VDS= 3V, f=1.8GHz VDS= 3V, f= 0.5GHz VDS= 3V, f=1.8GHz VDS= 3V, f= 0.5GHz VDS= 3V, f=1.8GHz 1 Min Typ Max Unit 5 30 45 mA 23 dB 10 5 9 dB 8 15 dBm * 1 IDD rank classification Rank P IDD(mA) 5 to 20 Q 15 to 30 R 25 to 45 * 2 NF, PG, PO test circuit VD C Cf Cc C G Cc S C = 1000 pF Cc = 200 pF Cf = 27 pF 1 page

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PDF GN1010 Data sheet ( Hoja de datos )