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PDF GM71C17800C-6 Data sheet ( Hoja de datos )
| Número de pieza | GM71C17800C-6 | |
| Descripción | 2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM | |
| Fabricantes | Hynix Semiconductor | |
| Logotipo |  |
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Description
The GM71C(S)17800C/CL is the new
generation dynamic RAM organized 2,097,152
x 8 bit. GM71C(S)17800C/CL has realized
higher density, higher performance and various
functions by utilizing advanced CMOS process
technology. The GM71C(S)17800C/CL offers
Fast Page Mode as a high speed access mode.
Multiplexed address inputs permit the
GM71C(S)17800C/CL to be packaged in
standard 400 mil 28pin plastic SOJ, and standard
400mil 28 pin plastic TSOP II. The package size
provides high system bit densities and is
compatible with widely available automated
testing and insertion equipment.
Pin Configuration
GM71C17800C
GM71CS17800CL
2,097,152 WORDS x 8 BIT
CMOS DYNAMIC RAM
Features
* 2,097,152 Words x 8 Bit Organization
* Fast Page Mode Capability
* Single Power Supply (5V+/-10%)
* Fast Access Time & Cycle Time
(Unit: ns)
GM71C(S)17800C/CL-5
GM71C(S)17800C/CL-6
GM71C(S)17800C/CL-7
t tRAC CAC
50 13
60 15
70 18
tRC
90
110
130
tPC
35
40
45
* Low Power
Active : 715/660/605mW (MAX)
Standby : 11mW (CMOS level : MAX)
0.83mW (L-version : MAX)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
* 2048 Refresh Cycles/32ms
* 2048 Refresh Cycles/128ms (L- version)
* Battery Back Up Operation (L- version)
* Self Refresh Operation (L-version)
28 SOJ
VSS 1
I/O0 2
I/O1 3
I/O2 4
I/O3 5
WE 6
RAS 7
NC 8
A10 9
A0 10
A1 11
A2 12
A3 13
VCC 14
28 VSS
27 I/O7
26 I/O6
25 I/O5
24 I/O4
23 CAS
22 OE
21 A9
20 A8
19 A7
18 A6
17 A5
16 A4
15 VSS
28 TSOP II
VSS 1
I/O0 2
I/O1 3
I/O2 4
I/O3 5
WE 6
RAS 7
NC 8
A10 9
A0 10
A1 11
A2 12
A3 13
VCC 14
28 VSS
27 I/O7
26 I/O6
25 I/O5
24 I/O4
23 CAS
22 OE
21 A9
20 A8
19 A7
18 A6
17 A5
16 A4
15 VSS
(Top View)
Rev 0.1 / Apr’01
1 page  
Read Cycle
Symbol
Parameter
tRAC Access Time from RAS
tCAC Access Time from CAS
tAA Access Time from Address
tOAC Access Time from OE
tRCS Read Command Setup Time
tRCH Read Command Hold Time to CAS
tRRH Read Command Hold Time to RAS
tRAL Column Address to RAS Lead Time
tCAL Column Address to CAS Lead Time
tCLZ CAS to Output in Low-Z
tOH Output Data Hold Time
tOHO Output Data Hold Time from OE
tOFF Output Buffer Turn-off Time
tOEZ Output Buffer Turn-off Time to OE
tCDD CAS to DIN Delay Time
GM71C17800C
GM71CS17800CL
GM71C(S)17800 GM71C(S)17800 GM71C(S)17800
C/CL-5
C/CL-6
C/CL-7
Min Max Min Max Min Max
Unit
- 50 - 60 - 70 ns
- 13 - 15 - 18 ns
- 25 - 30 - 35 ns
- 13 - 15 - 18 ns
0- 0- 0-
ns
0- 0- 0-
ns
5-
5-
5-
25 - 30 - 35 -
ns
ns
25 - 30 - 35 -
ns
0- 0- 0-
ns
3- 3- 3-
ns
3- 3- 3-
ns
- 13 - 15 - 15 ns
- 13 - 15 - 15 ns
13 - 15 - 18 -
ns
Note
8,9
9,10,17
9,11,17
9
12
12
13
13
5
Write Cycle
Symbol
Parameter
tWCS
tWCH
tWP
tRWL
tCWL
tDS
tDH
Write Command Setup Time
Write Command Hold Time
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
Data-in Setup Time
Data-in Hold Time
GM71C(S)17800 GM71C(S)17800 GM71C(S)17800
C/CL-5
C/CL-6
C/CL-7
Min Max Min Max Min Max
Unit
0-
0-
0 - ns
7 - 10 - 15 - ns
7 - 10 - 10 - ns
13 - 15 - 18 - ns
13 - 15 - 18 - ns
0-
0-
0-
ns
7 - 10 - 15 - ns
Note
14
15
15
Rev 0.1 / Apr’01
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet GM71C17800C-6.PDF ] | |
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