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PDF K4075 Data sheet ( Hoja de datos )

Número de pieza K4075
Descripción MOS FIELD EFFECT TRANSISTOR
Fabricantes NEC 
Logotipo NEC Logotipo



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No Preview Available ! K4075 Hoja de datos, Descripción, Manual

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4075
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4075 is N-channel MOS FET designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
2SK4075-ZK-E1-AY
Pure Sn (Tin)
2SK4075-ZK-E2-AY
PACKING
Tape
2500 p/reel
PACKAGE
TO-252 (MP-3ZK)
typ. 0.27 g
FEATURES
Low on-state resistance
RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
Low Ciss: Ciss = 2900 pF TYP.
Logic level drive type
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 40 V
Gate to Source Voltage (VDS = 0 V)
VGSS ±20 V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±60
±180
A
A
Total Power Dissipation (TC = 25°C) PT1 52 W
Total Power Dissipation (TA = 25°C) PT2 1.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg –55 to +150 °C
IAS 28 A
EAS 78 mJ
Notes 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C) 2.4 °C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
125
°C/W
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18223EJ2V0DS00 (2nd edition)
Date Published September 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006

1 page




K4075 pdf
2SK4075
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
14
12 ID = 15 A, VGS = 4.5 V
10
8
6
4 ID = 30 A, VGS = 10 V
2
0
-100 -50
0
50 100 150
Tch - Channel Temperature - °C
200
1000
SWITCHING CHARACTERISTICS
100
10
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
0.1
1
10
ID - Drain Current - A
td(off)
td(on)
tr
tf
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
VGS = 10 V
100
0V
10
1
Pulsed
0.1
0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C iss
1000
C oss
100
C rss
VGS = 0 V
f = 1 MHz
10
0.1 1 10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
35
30
25
20
15
10
5
0
0
VDD = 32 V
20 V
8V
12
10
8
6
VGS
4
VDS
20
ID = 60 A
Pulsed
2
0
40 60
QG - Gate Chage - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1 1
10
ID - Drain Current - A
100
Data Sheet D18223EJ2V0DS
5

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