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Número de pieza | IKD04N60R | |
Descripción | IGBT | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
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IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage
IKD04N60R
600VTRENCHSTOPTMRC-Seriesforhardswitchingapplications
Datasheet
IndustrialPowerControl
1 page IKD04N60R
TRENCHSTOPTMRC-Seriesforhardswitchingapplications
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current1) ICES
Gate-emitter leakage current
Transconductance
Integrated gate resistor
IGES
gfs
rG
VGE=0V,IC=0.20mA
VGE=15.0V,IC=4.0A
Tvj=25°C
Tvj=175°C
VGE=0V,IF=4.0A
Tvj=25°C
Tvj=175°C
IC=0.07mA,VCE=VGE
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=4.0A
min.
Value
typ.
max. Unit
600 -
-V
- 1.65 2.10 V
- 1.85 -
- 1.70 2.10 V
- 1.70 -
4.3 5.0 5.7 V
- - 40.0 µA
- - 1000.0
- - 100 nA
- 2.2 - S
none
Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Cies
Coes
Cres
Gate charge
QG
Short circuit collector current
Max. 1000 short circuits
IC(SC)
Time between short circuits: ≥ 1.0s
VCE=25V,VGE=0V,f=1MHz
VCC=480V,IC=4.0A,
VGE=15V
VGE=15.0V,VCC≤400V,
tSC≤5µs
Tvj=25°C
Value
Unit
min. typ. max.
- 305 -
- 18 - pF
-9-
- 27.0 - nC
- -A
31
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=4.0A,
VGE=0.0/15.0V,
rG=43.0Ω,Lσ=60nH,
Cσ=40pF
Lσ,CσfromFig.E
min.
Value
typ.
max. Unit
- 14 - ns
- 8 - ns
- 146 - ns
- 171 - ns
- 0.09 - mJ
- 0.15 - mJ
- 0.24 - mJ
1) Not subject to production test - verified by design/characterization
5
Rev.2.5,2014-03-12
5 Page IKD04N60R
TRENCHSTOPTMRC-Seriesforhardswitchingapplications
18
120V
480V
16
14
12
10
8
6
4
2
0
0 5 10 15 20 25
QGE,GATECHARGE[nC]
Figure 17. Typicalgatecharge
(IC=4A)
1000
100
Cies
Coes
Cres
10
1
30 0 5 10 15 20 25 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
60 14
50 12
10
40
8
30
6
20
4
10 2
0
12 14 16 18 20
VGE,GATE-EMITTERVOLTAGE[V]
Figure 19. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤400V,startatTvj=25°C)
0
10 11 12 13 14 15
VGE,GATE-EMITTERVOLTAGE[V]
Figure 20. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE≤400V,startatTvj=150°C)
11 Rev.2.5,2014-03-12
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet IKD04N60R.PDF ] |
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