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PDF IRG4PH40S Data sheet ( Hoja de datos )
| Número de pieza | IRG4PH40S | |
| Descripción | Standard Speed IGBT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD -91808
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PH40S
Standard Speed IGBT
Features
• Extremely low on state voltage drop 1.0V typical at
5.0A
• Extremely low VCE(on) variation from lot to lot
• Industry standard TO-247AC package
C
G
E
N-channel
VCES = 1200V
VCE(on) typ. = 1.46V
@VGE = 15V, IC = 20A
Benefits
• High current density systems
• Optimized for specific application conditions
• Lower voltage drop than many high voltage MOSFETs
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
TO-247AC
Max.
1200
33
20
66
66
±20
250
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.24
–––
6.0(0.21)
Max.
0.77
–––
40
–––
Units
°C/W
g (oz)
1
9/23/98
1 page  
4000
3000
2000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
1000
Coes
Cres
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4PH40S
20
VCC = 400V
I C = 20A
16
12
8
4
0
0 20 40 60 80 100
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
13 VCC = 960V
VGE = 15V
TJ = 25 °C
IC = 20A
12
100 RG = 10Ω
VGE = 15V
VCC = 960V
10
IC = 40 A
IC = 20 A
IC = 10 A
11
0
10 20 30 40 50
RG , Gate Resistance ( Ω )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRG4PH40S.PDF ] | |
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