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PDF CD216A-B120L Data sheet ( Hoja de datos )

Número de pieza CD216A-B120L
Descripción MITE Chip Diode
Fabricantes Bourns 
Logotipo Bourns Logotipo



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No Preview Available ! CD216A-B120L Hoja de datos, Descripción, Manual

Features
Lead free versions available
RoHS compliant (lead free version)*
Low profile
Surface mount
Very low forward voltage drop
Applications
Cellular phones
PDAs
Desktop PCs and notebooks
Digital cameras
MP3 players
CD216A-B120L ~ B140 MITE Chip Diode
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers Schottky Rectifier Diodes for rectification applications in compact DO-216AA size chip package formats, which offer PCB real
estate savings and are considerably smaller than competitive parts. The Schottky Barrier Rectifier Diodes offer a forward current of 1 A with a
choice of repetitive peak reverse voltage of 20 V up to 40 V.
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration
minimizes roll away.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
B120L
Forward Voltage (Max.)
(If = 1 A)
Typical Junction
Capacitance*
VF 0.45
CT 90
Reverse Current (Max.)
(at Rated VR)
IR 400
* Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
B120L
Repetitive Peak Reverse Voltage
DC Blocking Voltage
RMS Voltage
Average Forward Current
@ TL = 130 °C
Peak Forward Surge Current**
Max. Instantaneous Forward Voltage***
@ IF = 0.1 A
@ IF = 1.0 A
@ IF = 2.0 A
@ IF = 3.0 A
Max. Instantaneous Reverse Current
@ VR = 40 V
@ VR = 30 V
@ VR = 20 V
@ VR = 10 V
@ VR = 5 V
Thermal Resistance
Junction to Lead (Anode)
Junction to Tab (Cathode)
Junction to Ambient
Storage Temperature
Junction Temperature
VRRM
VDC
VRMS
IO
IFSM
VF
IR
RθJL
RθJTAB
RθJA
TSTG
TJ
20
20
14
50
0.34
0.45
0.65
0.4
0.1
** Surge Current 8.3 ms single phase, half sine wave, 60 Hz (JEDEC Method).
*** Pulse Test; Pulse Width = 300 uS, Duty Cycle = 2 %.
CD216-
B120R
B130L
0.53
0.38
75 70
10 410
CD216-
B120R
B130L
20 30
20 30
14 21
1
50 50
0.455
0.53
0.595
0.30
0.38
0.52
0.0100
0.0010
0.0005
0.41
0.13
0.05
35
20
250
-55 to +125
-55 to +150
B140
0.55
60
500
Unit
V
pF
µA
B140
40
40
28
40
0.36
0.55
0.85
0.50
0.15
Unit
V
V
V
A
A
V
mA
°C/W
°C/W
°C/W
°C
°C
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.

1 page




CD216A-B120L pdf
CD216A-B120L ~ B140 MITE Chip Diode
Rating and Characteristic Curves: CD216A-B130L
Forward Characteristics
10
Ta = 25 °C
Pulsewidth: 300 µs
1
Reverse Characteristics
100
10 125 °C
100 °C
1
0.1
0.1
0
100 °C
125 °C
25 °C
0.2
0.4
0.6
Forward Voltage (Volts)
Derating Curve
1.25
0.8
25 °C
0.01
0.001
0
5 10 15 20 25 30 35
1 Reverse Voltage (Volts)
Capacitance Between Terminals
150
1.00
0.75
0.50
0.25
0.00
25
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
50 75 100
Lead Temperature (°C)
125
150
125
100
75
50
25
0
0
F = 1 MHz
Ta = 25 °C
10 20 30
Reverse Voltage (Volts)
40
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.

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