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PDF STD4N52K3 Data sheet ( Hoja de datos )

Número de pieza STD4N52K3
Descripción N-channel Power MOSFET
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! STD4N52K3 Hoja de datos, Descripción, Manual

STD4N52K3, STF4N52K3,
STP4N52K3, STU4N52K3
N-channel 525 V, 2.5 A, 2.1 Ω typ., SuperMESH3™ Power MOSFET
in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet — production data
Features
Order codes
VDSS
RDS(on)
max
ID
Pw
STD4N52K3
STF4N52K3
STP4N52K3
STU4N52K3
525 V
< 2.6 Ω
2.5 A 45 W
2.5 A 20 W
(1)
2.5 A 45 W
2.5 A 45 W
1. Limited by package
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitance
Improved diode reverse recovery
characteristics
Zener-protected
Application
Switching applications
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
3
1
DPAK
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
IPAK
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order codes
STD4N52K3
STF4N52K3
STP4N52K3
STU4N52K3
Marking
4N52K3
4N52K3
4N52K3
4N52K3
Package
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
Tube
February 2013
This is information on a product in full production.
Doc ID 18206 Rev 2
1/21
www.st.com
21

1 page




STD4N52K3 pdf
STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3
Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
(1)
ISDM Source-drain current (pulsed)
2.5 A
-
10 A
(2)
VSD Forward on voltage
ISD = 2.5 A, VGS = 0
-
1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
173
ISD = 2.5 A, di/dt = 100 A/μs
VDD = 60 V (see Figure 23)
- 778
9
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2.5 A, di/dt = 100 A/μs
196
VDD = 60 V, Tj = 150 °C
(see Figure 23)
- 941
10
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 μs, duty cycle 1.5%
Table 8.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
(1) Gate-source breakdown
BVGSO voltage
Igs=± 1 mA (open drain)
30
-
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
Doc ID 18206 Rev 2
5/21

5 Page





STD4N52K3 arduino
STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3
Figure 24. DPAK (TO-252) drawing
Package mechanical data
Figure 25. DPAK footprint(a)
6.7
6.7
1.8 3 1.6
2.3
2.3
1.6
0068772_I
AM08850v1
a. All dimensions are in millimeters
Doc ID 18206 Rev 2
11/21

11 Page







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