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PDF BD314 Datasheet ( Hoja de datos )

Número de pieza BD314
Descripción Silicon PNP Power Transistor
Fabricantes INCHANGE 
Logotipo INCHANGE Logotipo

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BD314 Hoja de datos, Descripción, Manual
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD314
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-hFE= 25(Min.)@IC = -4A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0 V(Max)@ IC = -5A
·Complement to Type BD313
APPLICATIONS
·Designed for high quality amplifiers operating up to 60 watts
into 4 ohm load.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80 V
VCEO
Collector-Emitter Voltage
-80 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-10 A
ICM Collector Current-Peak
-20 A
IBB Base Current-Continuous
-4 A
PC Collector Power Dissipation@TC=25115
W
TJ Junction Temperature
200
Tstg Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.52 /W
isc Websitewww.iscsemi.cn
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