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PDF BD314 Data sheet ( Hoja de datos )
| Número de pieza | BD314 | |
| Descripción | Silicon PNP Power Transistor | |
| Fabricantes | INCHANGE | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD314
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-hFE= 25(Min.)@IC = -4A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0 V(Max)@ IC = -5A
·Complement to Type BD313
APPLICATIONS
·Designed for high quality amplifiers operating up to 60 watts
into 4 ohm load.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80 V
VCEO
Collector-Emitter Voltage
-80 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-10 A
ICM Collector Current-Peak
-20 A
IBB Base Current-Continuous
-4 A
PC Collector Power Dissipation@TC=25℃ 115
W
TJ Junction Temperature
200 ℃
Tstg Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.52 ℃/W
isc Website：www.iscsemi.cn
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1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BD314.PDF ] | |
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