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PDF K2462 Data sheet ( Hoja de datos )
| Número de pieza | K2462 | |
| Descripción | MOSFET ( Transistor ) - 2SK2462 | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2462
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2462 is N-Channel MOS Field Effect Transistor de-
signed for high current switching applications.
FEATURES
• Low On-Resistance
RDS(on)1 = 0.14 Ω MAX. (@ VGS = 10 V, ID = 8.0 A)
RDS(on)2 = 0.17 Ω MAX. (@ VGS = 4 V, ID = 8.0 A)
• Low Ciss Ciss = 790 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
100 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
ID(DC)
±15 A
Drain Current (pulse)*
ID(pulse)
±60 A
Total Power Dissipation (Tc = 25 ˚C) PT1
30 W
Total Power Dissipation (TA = 25 ˚C) PT2
2.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS
15 A
Single Avalanche Energy** EAS 22.5 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
0.7 ±0.1
2.54
1.3 ±0.2
2.5 ±0.1
1.5 ±0.2 0.65 ±0.1
2.54
1 23
1. Gate
2. Drain
3. Source
MP-45F(ISOLATED TO-220)
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is
externally required if a voltage exceeding rated voltage may
be applied to this device.
Document No. D10031EJ1V0DS00
Date Published May 1995 P
Printed in Japan
© 1995
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0.4
0.3
0.2 VGS = 4 V
0.1 VGS = 10 V
0 ID = 8.0 A
–50 0 50 100 150
Tch - Channel Temperature - ˚C
10 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
1 000
100
Ciss
Coss
Crss
10
1 10 100 1 000
VDS - Drain to Source Voltage - V
10 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/ µs
VGS = 0
1 000
100
10
0.1
1.0 10
ID - Drain Current - A
100
2SK2462
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10 4 V
1
VGS = 0
0 1.0 2.0
VSD - Source to Drain Voltage - V
3.0
1 000
100
10
SWITCHING CHARACTERISTICS
td(off)
tr
tf
td(on)
1.0
0.1
VDD = 50 V
VGS = 10 V
RG = 10 Ω
1.0 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 VDD = 80 V 16
ID = 15 A 14
60
VDS
12
10
40 VGS 8
6
20 4
2
0 10 20 30 40
Qg - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K2462.PDF ] | |
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